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ESD protection structure and method

  • US 6,218,704 B1
  • Filed: 05/07/1997
  • Issued: 04/17/2001
  • Est. Priority Date: 05/07/1997
  • Status: Expired due to Fees
First Claim
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1. A dual-diode electrostatic discharge protection device comprising:

  • a) a semiconductor substrate;

    b) a first diode formed in said semiconductor substrate, the first diode including;

    i) a first well formed in said semiconductor substrate, the first well comprising a first diode cathode;

    ii) a first diffusion formed in the first well, the first diffusion comprising a first diode anode, c) a second diode formed in said semiconductor substrate, the second diode including;

    i) a second well formed in said semiconductor substrate, ii) a second diffusion formed in the second well, the second well and the second diffusion comprising a second diode cathode and said semiconductor substrate comprising a second diode anode;

    d) at least one implant formed at an edge of the first well;

    e) at least one implant formed at an edge of the second well; and

    f) an input, the input coupled to the first diffusion and said second diffusion and to a protected device such that the protected device is protected from electrostatic discharge; and

    wherein said semiconductor substrate comprises a p-type substrate, wherein said first well comprises a n-type well, wherein said first diffusion comprises a p-type diffusion, wherein the at least one implant formed at an edge of the first well comprises a n-type implant, wherein the second well comprises a n-type well, wherein the second diffusion comprises a n-type diffusion, and wherein the at least one implant formed at an edge of the second well comprises a n-type implant.

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