Integrated circuit including a driver for a metal-semiconductor field-effect transistor

• US 6,218,891 B1
• Filed: 07/28/2000
• Issued: 04/17/2001
• Est. Priority Date: 07/28/2000
• Status: Expired due to Term

• Current Assignee: ABB Power Electronics Inc. (ABB Limited)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Tang, Wei, Rozman, Allen F., Lotfi, Ashraf W., Tan, Jian
• Primary Examiner(s): Riley, Shawn
• Application Number:
  US09/628,266
• Time in Patent Office: 263 Days
• Field of Search: 363/15, 363/21, 363/25, 363/89, 363/127, 257/280, 327/431
• US Class Current: 327/431
• CPC Class Codes: H02M 3/33592 having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
• CPC Class Codes: H03K 17/04123 in field-effect transistor switches
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

An integrated circuit including a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias the MESFET into a non-conduction state, a method of driving the MESFET and a power converter employing the integrated circuit and method. In one embodiment, the integrated circuit includes a driver including a bias capacitor integrated with the MESFET. The driver is configured to apply a positive voltage to bias the MESFET into a conduction state, and apply the negative voltage to bias the MESFET into the non-conduction state without employing an external negative bias source.

Claims

1. An integrated circuit, comprising:

a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said MESFET into a non-conduction state; and

a driver including a bias capacitor integrated with said MESFET and configured to;

apply a positive voltage to bias said MESFET into a conduction state, and

apply said negative voltage to bias said MESFET into said non-conduction state without employing an external negative bias source.

2. The integrated circuit as recited in claim 1 wherein said driver further comprises at least one diode.

3. The integrated circuit as recited in claim 2 wherein said at least one diode is parallel-coupled to said bias capacitor.

4. The integrated circuit as recited in claim 1 wherein said driver is coupled to a control terminal of said MESFET.

5. The integrated circuit as recited in claim 1 wherein said MESFET is a Gallium-Arsenide metal-semiconductor field-effect transistor (GaAsMESFET).

6. The integrated circuit as recited in claim 1 wherein said integrated circuit forms a portion of a power converter.

7. The integrated circuit as recited in claim 6 wherein said power converter is selected from the group consisting of:

a boost power converter,

a buck power converter, and

a buck-boost power converter.

8. A method of driving a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said MESFET into a non-conduction state, comprising:

establishing one of a positive and negative voltage across a bias capacitor, integrated with said MESFET, to drive said MESFET;

applying said positive voltage to bias said MESFET into a conduction state; and

applying said negative voltage to bias said MESFET into said non-conduction state without employing an external negative bias source.

9. The method as recited in claim 8 wherein said establishing is performed in cooperation with at least one diode.

10. The method as recited in claim 9 wherein said at least one diode is parallel-coupled to said bias capacitor.

11. The method as recited in claim 10 wherein said parallel-coupled bias capacitor and at least one diode are coupled to a control terminal of said MESFET.

12. The method as recited in claim 8 wherein said MESFET is a Gallium-Arsenide metal-semiconductor field-effect transistor (GaAsMESFET).

13. The method as recited in claim 8 wherein said MESFET forms a portion of a power converter.

14. The method as recited in claim 13 wherein said power converter is selected from the group consisting of:

a boost power converter,

a buck power converter, and

a buck-boost power converter.

15. A power converter having an input and an output, comprising:

an inverter, coupled to said input, having a power switch integrated circuit including;

a power metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said power MESFET into a non-conduction state; and

a power MESFET driver including a power MESFET driver bias capacitor integrated with said power MESFET and configured to;

apply a positive voltage to bias said power MESFET into a conduction state, and

apply said negative voltage to bias said power MESFET into said non-conduction state without employing an external negative bias source;

a rectifier, interposed between said inverter and said output, having a rectifier switch integrated circuit including;

a rectifier MESFET having a nominal intrinsic capacitance and requiring said negative voltage to bias said rectifier MESFET into said non-conduction state; and

a rectifier MESFET driver including a rectifier MESFET driver bias capacitor integrated with said rectifier MESFET and configured to;

apply said positive voltage to bias said rectifier MESFET into said conduction state, and

apply said negative voltage to bias said rectifier MESFET into said non-conduction state without employing said external negative bias source; and

a control circuit, coupled to said inverter and rectifier, configured to control at least one of said power MESFET and rectifier MESFET.

16. The power converter as recited in claim 15 wherein each of said power MESFET driver and rectifier MESFET driver further comprises at least one diode.

17. The power converter as recited in claim 15 further comprising a transformer, interposed between said inverter and rectifier, and said inverter further comprises an active clamp having clamp switch integrated circuit including:

a clamp MESFET having a nominal intrinsic capacitance and requiring said negative voltage to bias said clamp MESFET into said non-conduction state; and

a clamp MESFET driver including a clamp MESFET driver bias capacitor integrated with said clamp MESFET and configured to;

apply said positive voltage to bias said clamp MESFET into said conduction state, and

apply said negative voltage to bias said clamp MESFET into said non-conduction state without employing said external negative bias source.

18. The power converter as recited in claim 15 wherein said power MESFET driver and rectifier MESFET driver are coupled to control terminals of said power MESFET and rectifier MESFET, respectively.

19. The power converter as recited in claim 15 wherein said power MESFET and rectifier MESFET are Gallium-Arsenide metal-semiconductor field-effect transistors (GaAsMESFETs).

20. The power converter as recited in claim 15 further comprising an output filter interposed between said rectifier and said output of said power converter.

21. The power converter as recited in claim 15 wherein said power converter is selected from the group consisting of:

a boost power converter,

a buck power converter, and

a buck-boost power converter.