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Integrated circuit including a driver for a metal-semiconductor field-effect transistor

  • US 6,218,891 B1
  • Filed: 07/28/2000
  • Issued: 04/17/2001
  • Est. Priority Date: 07/28/2000
  • Status: Expired due to Term
First Claim
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1. An integrated circuit, comprising:

  • a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said MESFET into a non-conduction state; and

    a driver including a bias capacitor integrated with said MESFET and configured to;

    apply a positive voltage to bias said MESFET into a conduction state, and apply said negative voltage to bias said MESFET into said non-conduction state without employing an external negative bias source.

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