Integrated circuit including a driver for a metal-semiconductor field-effect transistor
First Claim
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1. An integrated circuit, comprising:
- a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said MESFET into a non-conduction state; and
a driver including a bias capacitor integrated with said MESFET and configured to;
apply a positive voltage to bias said MESFET into a conduction state, and apply said negative voltage to bias said MESFET into said non-conduction state without employing an external negative bias source.
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Abstract
An integrated circuit including a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias the MESFET into a non-conduction state, a method of driving the MESFET and a power converter employing the integrated circuit and method. In one embodiment, the integrated circuit includes a driver including a bias capacitor integrated with the MESFET. The driver is configured to apply a positive voltage to bias the MESFET into a conduction state, and apply the negative voltage to bias the MESFET into the non-conduction state without employing an external negative bias source.
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Citations
21 Claims
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1. An integrated circuit, comprising:
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a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said MESFET into a non-conduction state; and
a driver including a bias capacitor integrated with said MESFET and configured to;
apply a positive voltage to bias said MESFET into a conduction state, and apply said negative voltage to bias said MESFET into said non-conduction state without employing an external negative bias source. - View Dependent Claims (2, 3, 4, 5, 6, 7)
a boost power converter, a buck power converter, and a buck-boost power converter.
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8. A method of driving a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said MESFET into a non-conduction state, comprising:
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establishing one of a positive and negative voltage across a bias capacitor, integrated with said MESFET, to drive said MESFET;
applying said positive voltage to bias said MESFET into a conduction state; and
applying said negative voltage to bias said MESFET into said non-conduction state without employing an external negative bias source. - View Dependent Claims (9, 10, 11, 12, 13, 14)
a boost power converter, a buck power converter, and a buck-boost power converter.
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15. A power converter having an input and an output, comprising:
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an inverter, coupled to said input, having a power switch integrated circuit including;
a power metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias said power MESFET into a non-conduction state; and
a power MESFET driver including a power MESFET driver bias capacitor integrated with said power MESFET and configured to;
apply a positive voltage to bias said power MESFET into a conduction state, and apply said negative voltage to bias said power MESFET into said non-conduction state without employing an external negative bias source;
a rectifier, interposed between said inverter and said output, having a rectifier switch integrated circuit including;
a rectifier MESFET having a nominal intrinsic capacitance and requiring said negative voltage to bias said rectifier MESFET into said non-conduction state; and
a rectifier MESFET driver including a rectifier MESFET driver bias capacitor integrated with said rectifier MESFET and configured to;
apply said positive voltage to bias said rectifier MESFET into said conduction state, and apply said negative voltage to bias said rectifier MESFET into said non-conduction state without employing said external negative bias source; and
a control circuit, coupled to said inverter and rectifier, configured to control at least one of said power MESFET and rectifier MESFET. - View Dependent Claims (16, 17, 18, 19, 20, 21)
a clamp MESFET having a nominal intrinsic capacitance and requiring said negative voltage to bias said clamp MESFET into said non-conduction state; and
a clamp MESFET driver including a clamp MESFET driver bias capacitor integrated with said clamp MESFET and configured to;
apply said positive voltage to bias said clamp MESFET into said conduction state, and apply said negative voltage to bias said clamp MESFET into said non-conduction state without employing said external negative bias source.
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18. The power converter as recited in claim 15 wherein said power MESFET driver and rectifier MESFET driver are coupled to control terminals of said power MESFET and rectifier MESFET, respectively.
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19. The power converter as recited in claim 15 wherein said power MESFET and rectifier MESFET are Gallium-Arsenide metal-semiconductor field-effect transistors (GaAsMESFETs).
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20. The power converter as recited in claim 15 further comprising an output filter interposed between said rectifier and said output of said power converter.
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21. The power converter as recited in claim 15 wherein said power converter is selected from the group consisting of:
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a boost power converter, a buck power converter, and a buck-boost power converter.
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Specification