Multilevel cell programming
First Claim
1. A method of programming a plurality of multi-level memory cells within a programming time target, the multi-level memory cells having at least first, second, third and fourth programming levels, the fourth programming level being the erase state, the first programming level being the programming level furthest from the fourth programming level, the second and third programming levels being within the first and fourth programming levels, comprising:
- erasing the plurality of multi-level memory cells;
programming a first group of multi-level memory cells with the first programming level with a first programming pulse count, a first pulse width, and a first programming voltage;
programming a second group of multi-level memory cells with the second programming level with a second programming pulse count, a second pulse, width and a second programming voltage; and
programming a third group of multi-level memory cells with the third programming level with a third programming pulse count, a third pulse width, and a third programming voltage.
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Accused Products
Abstract
Method of storing and retrieving multiple bits of information in a multi-level cell of non-volatile memory including programming a plurality of multi-level memory cells within a programming time target. The multi-level memory cells having at least first, second, third and fourth programming levels. The fourth programming level being the erase state, the first programming level being the programming level furthest from the fourth programming level. The second and third programming levels being within the first and fourth programming levels, includes erasing the plurality of multi-level memory cells. Then, programming a first group of multi-level memory cells with the first programming level with a first programming pulse count having a first pulse width and a first programming voltage. Then, programming a second group of multi-level memory cells with the second programming level with a second programming pulse count having a second pulse width and a second programming voltage. Then programming a third group of multi-level memory cells with the third programming level with a third programming pulse count having a third pulse width and a third programming voltage.
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Citations
20 Claims
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1. A method of programming a plurality of multi-level memory cells within a programming time target, the multi-level memory cells having at least first, second, third and fourth programming levels, the fourth programming level being the erase state, the first programming level being the programming level furthest from the fourth programming level, the second and third programming levels being within the first and fourth programming levels, comprising:
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erasing the plurality of multi-level memory cells;
programming a first group of multi-level memory cells with the first programming level with a first programming pulse count, a first pulse width, and a first programming voltage;
programming a second group of multi-level memory cells with the second programming level with a second programming pulse count, a second pulse, width and a second programming voltage; and
programming a third group of multi-level memory cells with the third programming level with a third programming pulse count, a third pulse width, and a third programming voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A memory device, comprising:
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(a) a plurality of memory cells capable of being programmed with a first, second, third, and fourth voltage levels, each voltage level corresponding to a plurality of bits of information, the plurality of memory cells comprising a first, second, third, and fourth group of cells;
(b) a pulse count determination means for determining first, second, and third pulse counts for programming the first, second, and third group of cells, respectively;
(c) a program voltage determination means for determining first, second, and third program voltages for programming the first, second, and third group of cells, respectively; and
(d) a cell programming means for programming each of the plurality of cells in the plurality of memory cells with the first, second, third, and four voltage levels, the cell programming means programming the plurality of memory cells with the fourth voltage level, then programming the first group of cells to the first voltage level using the first program voltage and the first pulse count, then programming the second group of cells to the second voltage level using the second program voltage and the second pulse count, then programming the third group of cells to the third voltage level using the third program voltage and the third pulse count.
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16. A memory device, comprising:
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(a) a plurality of memory cells capable of being programmed with a first, second, third, and fourth voltage levels, each voltage level corresponding to a plurality of bits of information, the plurality of memory cells including a first, second, third, and fourth group of cells;
(b) a pulse count determinator capable of determining a first, second, and third pulse counts for programming the first, second, and third group of cells, respectively;
(c) a program voltage determinator being capable of determining a first, second, and third program voltages for programming the first, second, and third group of cells, respectively; and
(d) a cell programmer capable of programming each of the plurality of cells in the plurality of memory cells with the first, second, third, and four voltage levels, the cell programmer programming the plurality of memory cells with the fourth voltage level, then programming the first group of cells to the first voltage level using the first program voltage and the first pulse count, then programming the second group of cells to the second voltage level using the second program voltage and the second pulse count, then programming the third group of cells to the third voltage level using the third program voltage and the third pulse count. - View Dependent Claims (17, 18, 19, 20)
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Specification