Semiconductor amplifier and frequency converter

• US 6,219,535 B1
• Filed: 06/05/1998
• Issued: 04/17/2001
• Est. Priority Date: 06/06/1997
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Corporation (Panasonic Holdings Corporation)
• Inventors: Ueda, Daisuke, Ishida, Hidetoshi
• Primary Examiner(s): Nguyen, Lee
• Application Number:
  US09/092,438
• Time in Patent Office: 1,047 Days
• Field of Search: 455/313, 455/323, 455/325, 455/326, 455/333, 327/113, 327/116, 327/119, 327/356, 327/359
• US Class Current: 455/333
• CPC Class Codes: H03D 7/125 with field effect transistors

Abstract

A semiconductor circuit includes at least first and second field effect transistors. A source electrode of the first field effect transistor is connected to a drain electrode of the second field effect transistor via a first AC current blocking element and is also grounded via a bypass capacitor. A drain electrode of the first field effect transistor is connected to a power supply. A source-drain voltage of the first field effect transistor is equal to or higher than a pinch-off voltage of the first field effect transistor. A source-drain voltage of the second field effect transistor is equal to or higher than a pinch-off voltage of the second field effect transistor.

Claims

1. A semiconductor circuit, comprising at least first and second field effect transistors, wherein:

a source electrode of the first field effect transistor is connected top a drain electrode of the second field effect transistor via a first AC current blocking element and is also grounded via a bypass capacitor,

a drain electrode of the first field effect transistor is connected to a power supply,

a source-drain voltage of the first field effect transistor i s equal to or higher than a pinch-off voltage of the first field effect transistor, and

a source-drain voltage of the second field effect transistor is equal to or higher than a pinch-off voltage of the second field effect transistor,

wherein the drain outputs of the first and second field effect transistors are respectively inputted into a single mixer.

2. A semiconductor circuit, comprising at least first and second field effect transistors, wherein:

a source electrode of the first field effect transistor is connected to a drain electrode of the second field effect transistor via a first AC current blocking element and is also grounded via a bypass capacitor,

a drain electrode of the first field effect transistor is connected to a power supply,

a source-drain voltage of the first field effect transistor is equal to or higher than a pinch-off voltage of the first field effect transistor, and

a source-drain voltage of the second field effect transistor is equal to or higher than a pinch-off voltage of the second field effect transistor,

the semiconductor circuit further comprising at least one third field effect transistor and at least one second AC current blocking element, wherein;

each third field effect transistor is connected to one AC current is blocking element,

a drain electrode of the third field effect transistor is connected to the source electrode of the first field effect transistor via the first AC current blocking element,

source electrode of the third field effect transistor is connected to the drain electrode of the second field effect transistor via the second AC current blocking element, and

a source-drain voltage of the third field effect transistor is equal to or higher than a pinch-off voltage of the third field effect transistor.

3. A semiconductor circuit according to claim 2, further comprising a gate voltage supply circuit, wherein gate electrodes of the first and third field effect transistors are connected to the gate voltage supply circuit, and an end of the gate voltage supply circuit is connected to the power supply.

4. A semiconductor circuit according to claim 3, wherein the source electrode of the second field effect transistor is grounded via a resistor and a bypass capacitor which are connected to each other in parallel.