Efficient plasma containment structure

• US 6,221,202 B1
• Filed: 04/01/1999
• Issued: 04/24/2001
• Est. Priority Date: 04/01/1999
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Walko, Joseph Philip II
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/283,959
• Time in Patent Office: 754 Days
• Field of Search: 156/345, 118/723.R, 118/723.E
• US Class Current: 156/345.43
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

Plasma containment is achieved within a region by a containment plate while gas is allowed to flow through this region by openings in the plate. The openings in the plate are larger in two of the cross-sectional dimensions parallel to the plate surface than the thickness of the dark space or plasma sheath. The openings of the plate are wider nearest the source of the electromagnetic energy in order to attenuate the electromagnetic fields and thereby prevent build up of deposits which would block the flow gas through the plate.

Claims

1. A containment structure having an upper and lower portion for a plasma comprising:

means for containing a plasma, that is sustained by an electromagnetic energy, within a desired space by attenuating the electromagnetic field outside of said space to levels which do not sustain the plasma while maintaining high conductance across said containment structure having spaced, conductive surfaces; and

means for permitting gas flow through said containment structure which includes openings through said structure and wherein said means for containing a plasma comprises conductive surfaces oriented in a direction less than or substantially equal to 90°

from the direction of the electromagnetic field at said opening, while reducing the deposits from said plasma on parts of said containment structure.

2. The containment structure of claim 1 wherein said plasma has a plasma sheath and two dimensions of said openings along surface of said containment structure are greater than said plasma sheath.

3. The containment structure of claim 2 wherein said conductive surfaces form said openings.

4. The containment structure of claim 2 wherein said means for containing a plasma maintains high conductance in the presence of deposits from said plasma on said containment structure.

5. The containment structure of claim 4 wherein the electromagnetic energy is created by microwaves which propagates along a Poynting vector and the conductive surfaces are oriented less than or equal to 90 degrees from the Poynting vector.

6. The containment structure of claim 4 wherein the electromagnetic energy is created by high energy at radio frequencies having an electric field and the conductive surfaces are oriented less than 90 degrees from the electric field.

7. The containment structure of claim 3 wherein the openings in the upper portion are wider than the openings in the lower portion.

8. The structure of claim 3 wherein the openings are gradually reduced in size.

9. A plasma reactor comprising:

a reactor chamber adapted to create and sustain a plasma in a space therein;

a containment structure having an upper and lower portion for containing a plasma within a desired portion of space in said chamber by attenuating electromagnetic energy having an electric field in said chamber while maintaining high conductance across said containment structure; and

means for permitting gas flow within said chamber and through said containment structure which includes openings through said structure which reduce the deposits from said plasma on said structure by lowering plasma intensity and wherein said means for containing a plasma comprises conductive surfaces oriented in a direction less than or substantially equal to 90°

from the direction of the electric field at said opening.

10. The plasma reactor of claim 9 wherein said conductive surfaces form said openings.

11. The plasma reactor of claim 9 wherein said reactor chamber contains an anode and a cathode.

12. The plasma reactor of claim 9 wherein said reactor chamber comprises a reactive ion etching chamber.

13. The plasma reactor of claim 9 wherein said reactor chamber comprises a plasma enhanced chemical vapor deposition chamber.

14. The plasma reactor of claim 10 wherein the openings in the upper portion of the structure are wider than the openings in the lower portion of the structure.

15. A plasma reactor comprising:

a reactor chamber adapted to create and sustain an active plasma in a space therein; and

a plasma containment structure having an upper and lower portion comprising means for containing an active plasma within a desired volume of space in said chamber on one side of said structure by attenuating electromagnetic field and permitting passage of ionized molecules while maintaining high conductance across said containment structure, thereby permitting formation of a cold plasma on the other side of said structure; and

means for permitting gas flow within said chamber and through said containment structure which includes openings through said structure which reduces the plasma intensity and the deposition rate of contaminants on said structure and wherein said means for containing a plasma comprises conductive surfaces oriented in a direction less than or substantially equal to 90°

from the direction of the electric field.

16. The plasma reactor of claim 15 wherein said plasma has a plasma sheath and two dimensions of said openings parallel to a surface of said containment structure are greater than said plasma sheath.

17. The plasma reactor of claim 16 wherein said conductive surfaces form said openings.

18. The plasma reactor of claim 17 wherein said reactor chamber contains an anode and a cathode.

19. The plasma reactor of claim 18 wherein said reactor chamber comprises a reactive ion etching chamber.

20. The plasma reactor of claim 17 wherein said reactor chamber comprises a plasma enhanced chemical vapor deposition chamber.

21. The plasma reactor of claim 17 wherein the openings in the upper portion of the structure are wider than the openings in the lower portion of the structure.

22. A containment structure for containing an electromagnetic field and a plasma having a surrounding plasma sheath, said containment structure comprising a structure made of an electrically conductive material configured to contain a plasma within a desired space by attenuating an electromagnetic field outside of said space while maintaining high conductance across said structure, said upper portion of the structure facing the plasma having wide openings there through for permitting gas flow within said chamber and reducing the plasma intensity, said openings on the lower portion being smaller than the upper portion.

23. The containment structure of claim 22 wherein said upper portion of the structure comprises widely spaced, conductive surfaces.

24. The containment structure of claim 23 wherein said structure further contains struts connecting said conductive surfaces.

25. The containment structure of claim 24 wherein said structure has a surface facing toward said plasma and wherein said struts are placed away from said surface.

26. The containment structure of claim 25 wherein said openings have surrounding walls, and wherein said walls are oriented in a direction less than or substantially equal to 90°

from the direction of the electromagnetic field at said opening.

27. The containment structure of claim 26 wherein said openings are annular.

28. The containment structure of claim 27 wherein said structure has an insulating coating there over.

29. The containment structure of claim 22 wherein said structure has a surface facing said plasma and said openings have surrounding walls, and wherein the angle between said top surface and a portion of said walls is less than or substantially equal 90°

.

30. The containment structure of claim 22 wherein said openings of the upper portion collects deposits of contaminants having minimal effect on the conductivity of the gas.

31. The containment structure of claim 30 wherein said openings contain non-overlapping conductive surfaces oriented to prevent line of sight transmission of a vector in the direction of the electromagnetic field at said opening to attenuate an electromagnetic field.

32. The containment structure of claim 22 wherein said openings have a width and a depth, and wherein the ratio of the width to depth of the openings varies across the structure as a function of strength of said electromagnetic field.