×

Method for manufacturing a semiconductor device

  • US 6,221,765 B1
  • Filed: 08/17/1999
  • Issued: 04/24/2001
  • Est. Priority Date: 08/31/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an insulating film on a semiconductor substrate and then forming a groove or hole in a given area of the insulating film;

    forming a barrier-metal film on interior surfaces of the groove or hole;

    forming a seed-metal film on the barrier-metal film formed inside the groove or hole;

    plating a first plating film on the seed-metal film using a metal material;

    conducting a first annealing for a given period;

    plating a second plating film of the above metal material on the annealed first plating film; and

    conducting a second annealing for a given period.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×