Method for manufacturing a semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film on a semiconductor substrate and then forming a groove or hole in a given area of the insulating film;
forming a barrier-metal film on interior surfaces of the groove or hole;
forming a seed-metal film on the barrier-metal film formed inside the groove or hole;
plating a first plating film on the seed-metal film using a metal material;
conducting a first annealing for a given period;
plating a second plating film of the above metal material on the annealed first plating film; and
conducting a second annealing for a given period.
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Abstract
Inside a groove are sequentially formed a barrier-metal film 3, a seed-metal film 4 and the first plating film 6. The thickness of the first plating film 6 is about 0.1 to 0.5 the width of the groove 5. After conducting the first annealing for about 5 hours at an ambient temperature or for about 30 min at 300° C. or higher, the second plating film 7 is formed, which is then subject to the second annealing for about 25 hours at an ambient temperature or for about 30 min at 300° C. or higher. Then, the surface of the substrate is smoothed by CMP to provide a semiconductor device.
63 Citations
11 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film on a semiconductor substrate and then forming a groove or hole in a given area of the insulating film;
forming a barrier-metal film on interior surfaces of the groove or hole;
forming a seed-metal film on the barrier-metal film formed inside the groove or hole;
plating a first plating film on the seed-metal film using a metal material;
conducting a first annealing for a given period;
plating a second plating film of the above metal material on the annealed first plating film; and
conducting a second annealing for a given period. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film on a semiconductor substrate and then forming a groove or hole in a given area of the insulating film;
forming a seed-metal film on the barrier-metal film formed inside the groove or hole;
forming a plating film on the seed-metal film using a metal material while distorting the surface substrate into a concave where the center of the surface to be plated extrudes; and
conducting annealing for a given period. - View Dependent Claims (7)
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8. A method for manufacturing a semiconductor device comprising steps of:
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forming an insulating film on a semiconductor substrate and then forming a groove or hole in a given area of the insulating film;
forming a barrier-metal film filling the groove or hole;
forming a seed-metal film on the barrier-metal film formed inside the groove or hole in a manner that a residual compressive stress is generated in the seed-metal film;
forming a plating film on the seed-metal film using a metal material and then conducting annealing for a given time. - View Dependent Claims (9, 10, 11)
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Specification