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Method for integrated circuit power and electrical connections via through-wafer interconnects

  • US 6,221,769 B1
  • Filed: 03/05/1999
  • Issued: 04/24/2001
  • Est. Priority Date: 03/05/1999
  • Status: Expired due to Term
First Claim
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1. A method for making a semiconductor material carrier with electrical connections extending directly through said semiconductor material carrier, said method comprising the steps of:

  • mechanically creating a hole completely through said semiconductor material carrier, said hole defining an inner surface extending from a first planar surface of said carrier to a second planar surface of said carrier;

    insulating said inner surface of said hole utilizing an insulating material that also serves as a diffusion barrier;

    depositing a seed material in said hole;

    plating said semiconductor material carrier to deposit conductive material on to said inner surface of said hole to extend from said first to said second planar surfaces of said semiconductor material carrier; and

    removing any excess deposited conductive material from said first and second planar surface.

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