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Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus

  • US 6,222,117 B1
  • Filed: 12/29/1998
  • Issued: 04/24/2001
  • Est. Priority Date: 01/05/1998
  • Status: Expired due to Term
First Claim
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1. A photovoltaic device comprising joined semiconductor layers on a substrate,wherein the substrate has a substantially planar surface with (a) concavities and convexities, (b) a highest point, and (c) a lowest point, such that (i) a substrate center value that is the mean elevation between said highest point and said lowest point can be determined, (ii) a total, TAsub-above, of projected areas of regions of the substrate surface that lie at or above the substrate center value can be determined, each said projected area being the cross-sectional area of a columnar projection extending perpendicular from the region, and (iii) a total, TAsub-entire, of the projected area of the entire substrate surface can be determined;

  • and the joined semiconductor layers have a substantially planar surface with (d) concavities and convexities, (e) a highest point, and (f) a lowest point, such that (iv) a semiconductor center value that is the mean elevation between said highest point and said lowest point can be determined, (v) a total, TAsemi-above, of projected areas of regions of the surface of the joined semiconductor layers that lie at or above the semiconductor center value can be determined, each projected area being the cross-sectional area of a columnar projection extending perpendicular from the region, and (vi) a total, TAsemi-entire, of the projected area of the entire surface of the joined semiconductor layers can be determined; and

    wherein the ratio of TAsub-above to TAsub-entire is greater than the ratio of TAsub-above to TAsub-entire.

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