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Memory cell with self-aligned floating gate and separate select gate, and fabrication process

  • US 6,222,227 B1
  • Filed: 08/09/1999
  • Issued: 04/24/2001
  • Est. Priority Date: 08/09/1999
  • Status: Expired due to Term
First Claim
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1. In a memory cell:

  • a substrate having an active area with source and drain regions on opposite sides of the active area, a floating gate which overlies the active area with portions of the floating gate extending laterally beyond the active area and overlying portions of the source and drain regions, a control gate positioned directly above the floating gate, and a select gate positioned entirely to one side of the floating gate and the control gate.

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