Reflective liquid crystal display apparatus with low manufacturing cost

• US 6,222,600 B1
• Filed: 07/27/2000
• Issued: 04/24/2001
• Est. Priority Date: 08/05/1996
• Status: Expired due to Term

• Current Assignee: Gold Charm Limited (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: NEC Corporation
• Inventors: Hirano, Naoto
• Primary Examiner(s): Dudek, James A.
• Application Number:
  US09/626,890
• Time in Patent Office: 271 Days
• Field of Search: 349/47, 349/113
• US Class Current: 349/113
• CPC Class Codes: G02F 1/133504 Diffusing, scattering, diffracting elements associated to illuminating devices G02F1/133606
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13725 based on guest-host interaction G02F1/13762, G02F1/13737, take precedence

Abstract

In a reflective liquid crystal apparatus, a drain electrode and a source electrode are formed on a insulating substrate and are formed by an aluminum alloy layer. The source electrode serves as a light reflecting pixel electrode. Also, a non-doped semiconductor layer is formed on a part of the drain electrode and a part of the source electrode, and impurity-doped semiconductor layers are formed between the drain and source electrodes and the non-doped semiconductor layer. Further, a gate electrode is formed via a gate insulating layer on the non-doped semiconductor layer. Additionally, a counter common electrode is formed on a transparent insulating substrate, and a liquid crystal layer is interposed between the insulating substrate and the transparent insulating substrate.

Claims

1. A method for manufacturing a liquid crystal display apparatus, comprising the steps of:

forming an aluminum alloy layer on an insulating substrate;

patterning said aluminum alloy layer to form a drain electrode and a source electrode, said source electrode serving as a light reflecting pixel electrode,

forming impurity-doped semiconductor layers on said drain electrode and said source electrode;

forming a non-doped semiconductor layer, an insulating layer and a conductive layer sequentially on said insulating substrate after said impurity-doped semiconductor layers are formed;

patterning said conductive layer to form a gate electrode; and

etching said insulating layer, said non-doped semiconductor layer, and said impurity-doped semiconductor layers by using said gate electrode as a mask.

2. The method as set forth in claim 1, further comprising the steps of:

forming a counter common electrode on a transparent insulating layer;

adhering said-transparent insulating substrate with said insulating substrate with a gap; and

inserting liquid crystal into said gap.

3. The method as set forth in claim 2, wherein at least one surface of said transparent insulating layer is uneven.

4. The method as set forth in claim 1, further comprising a step of forming a transparent insulating layer having an uneven surface on said drain electrode, said source electrode and said gate electrode, after said etching process is carried out.

5. The method as set forth in claim 4, wherein said transparent insulating layer is made of photosensitive acrylic resin.

6. The method as set forth in claim 4, wherein said transparent insulating layer is made of polyimide.

7. The method as set forth in claim 1, further comprising a step of forming a transparent insulating layer including light scattering particles on said drain electrode, said source electrode and said gate electrode, after said etching process is carried out.

8. The method as set forth in claim 7, wherein said transparent insulating layer is made of polyimide.

9. The method as set forth in claim 1, wherein said aluminum alloy layer forming step makes a surface of said aluminum alloy layer uneven and turbid.

10. The method as set forth in claim 1, further comprising a step of carrying dry-etching operation upon said aluminum alloy layer to make a surface of said aluminum alloy layer uneven, after said etching step is carried out.

11. The method as set forth in claim 1, further comprising a step of forming an ohmic contact layer on said insulating layer before said aluminum alloy layer is formed,

said aluminum alloy layer patterning layer patterning step also patterning said ohmic contact layer, so that said drain electrode and said source electrode are formed by said aluminum alloy layer and said ohmic contact layer.

12. The method as set forth in claim 11, wherein said ohmic contact layer is made of Mo.

13. The method as set forth in claim 11, wherein said ohmic contact layer is made of indium tin oxide.

14. The method as set forth in claim 1, further comprising a step of forming an ohmic contact layer on said insulating layer after said aluminum alloy layer is formed,

said aluminum alloy layer patterning layer patterning step also patterning said ohmic contact layer, so that said drain electrode and said source electrode are formed by said aluminum alloy layer and said ohmic contact layer.

15. The method as set forth in claim 14, wherein said ohmic contact layer is non-transparent,

said method further comprising a step of etching said ohmic contact layer by said etching step.

16. The method as set forth in claim 15, wherein said ohmic contact layer is made of Mo.

17. The method as set forth in claim 14, wherein said ohmic contact layer is transparent.

18. The method as set forth in claim 17, wherein said ohmic contact layer is made of indium tin oxide.

19. The method as set forth in claim 9, wherein said aluminum alloy layer is made of Al—

Si.