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Method to deposit a copper seed layer for dual damascene interconnects

  • US 6,225,221 B1
  • Filed: 02/10/2000
  • Issued: 05/01/2001
  • Est. Priority Date: 02/10/2000
  • Status: Expired due to Term
First Claim
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1. A method to deposit a copper seed layer for electroless copper plating in the fabrication of dual damascene interconnects in the manufacture of an integrated circuit device comprising:

  • providing a dielectric layer overlying a semiconductor substrate;

    patterning said dielectric layer to form trenches for planned dual damascene interconnects;

    depositing a barrier layer overlying said dielectric layer;

    depositing a copper seed layer overlying said barrier layer wherein said depositing is by reacting CuF2(copper(II)Fluoride) gas with said barrier layer; and

    performing said electroless copper plating using said copper seed layer to complete said integrated circuit device.

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