Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same

• US 6,225,647 B1
• Filed: 07/27/1998
• Issued: 05/01/2001
• Est. Priority Date: 07/27/1998
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Spanier, Jonathan E.
• Primary Examiner(s): Le, Vu A.
• Assistant Examiner(s): SMITH, BRADLEY
• Application Number:
  US09/123,181
• Time in Patent Office: 1,009 Days
• Field of Search: 438/694, 438/22, 257/3, 257/485, 257/79, 257/80, 257/94, 257/77, 257/103, 257/22
• US Class Current: 257/94
• CPC Class Codes: H01L 33/346 containing porous silicon

Abstract

A method for substantially improving the photoluminescent performance of a porous semiconductor, involving the steps of providing a bulk semiconductor substrate wafer of a given conductivity, wherein the substrate wafer has a porous semiconductor layer of the same conductivity as the bulk semiconductor substrate wafer, and the porous semiconductor layer is made up of a plurality of pores interspersed within a plurality of nanocrystallites, wherein each of the pores is defined by a pore wall and each of the nanocrystallites has a given thickness. Next, in the method, at least one monolayer layer of passivating material is generated on the pore wall of each of the pores, to passivate the porous semiconductor layer. The one layer of passivating material substantially eliminates dangling bonds and surface states which are associated with the porous semiconductor layer. The resulting passivated porous semiconductor layer exhibits a quantum efficiency of approximately 5 percent. In one embodiment of the present invention, the one monolayer of passivating material is an oxide which is generated by placing the bulk semiconductor substrate wafer into a furnace set a predetermined temperature and a predetermined pressure; introducing dry oxygen into the furnace for predetermined time period to grow the one monolayer of oxide on the pore wall of each of the pores; and cooling the substrate wafer at an ambient temperature and an ambient pressure. The predetermined time period is approximately 5 minutes. Also described is a heterojunction light emitting diode device which employs a passivated porous semiconductor layer made as described above and a method for fabricating same.

Claims

1. A heterojunction light-emitting diode device, comprising:

a bulk semiconductor wafer of a first conductivity having a porous semiconductor layer on an exposed surface of said substrate wafer, said porous semiconductor layer comprised of a plurality of pores within a plurality of nanocrystallites, wherein each of said pores is defined by a pore wall and each of said nanocrystallites has a given thickness;

at least one monolayer layer of passivating material on said pore wall of each of said pores, to passivate said porous semiconductor layer, wherein said passivated porous semiconductor layer exhibits a quantum efficiency of approximately 5 percent;

a transparent layer of semiconductor material disposed on selected areas of said passivated porous semiconductor layer, said transparent layer having a second conductivity, opposite to said first conductivity; and

an electrical contact layer disposed on a selected area of said transparent layer.

2. The diode device according to claim 1, wherein said transparent layer of semiconductor material comprises indium tin oxide.

3. The diode device according to claim 1, where said at least one monolayer of passivating material comprises an oxide.

4. A heterojunction light-emitting diode device, comprising:

a bulk semiconductor wafer of a first conductivity having a porous semiconductor layer on an exposed surface of said substrate wafer, said porous semiconductor layer comprised of a plurality of pores within a plurality of nanocrystallites, wherein each of said pores is defined by a pore wall and each of said nanocrystallites has a given thickness;

at least one monolayer of passivating material approximately 1 nm thick on said pore wall of each of said pores, to passivate said porous semiconductor layer, wherein said passivated porous semiconductor layer exhibits a quantum efficiency of approximately 5 percent;

a transparent layer of semiconductor material disposed on selected areas of said passivated porous semiconductor layer, said transparent layer having a second conductivity, opposite to said first conductivity; and

an electrical contact layer disposed on a selected area of said transparent layer.

6. The diode device according to claim 4, wherein said transparent layer of semiconductor material comprises indium tin oxide.

7. The diode device according to claim 4, where said at least one monolayer of passivating material comprises an oxide.

5. A heterojunction light-emitting diode device, comprising:

a bulk semiconductor wafer comprising bulk silicon carbide of a first conductivity having a porous semiconductor layer comprising porous silicon carbide on an exposed surface of said substrate wafer, said porous semiconductor layer comprised of a plurality of pores within a plurality of nanocrystallites, wherein each of said pores is defined by a pore wall and each of said nanocrystallites has a given thickness;

at least one monolayer of passivating material on said pore wall of each of said pores, to passivate said porous semiconductor layer, wherein said passivated porous semiconductor layer exhibits a quantum efficiency of approximately 5 percent;

a transparent layer of semiconductor material disposed on selected areas of said passivated porous semiconductor layer, said transparent layer having a second conductivity, opposite to said first conductivity; and

an electrical contact layer disposed on a selected area of said transparent layer.

8. The diode device according to claim 5, wherein said transparent layer of semiconductor material comprises indium tin oxide.

9. The diode device according to claim 5, where said at least one monolayer of passivating material comprises an oxide.