Insulated-gate bipolar semiconductor device
First Claim
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1. A vertical, insulated-gate bipolar semiconductor device, comprising:
- a semiconductor substrate having first and second main surfaces opposite each other;
an impurity region of a first conductivity type formed at the first main surface of the semiconductor substrate;
a first impurity region of a second conductivity type formed at the second main surface of the semiconductor substrate;
a second impurity region of the second conductivity type internally surrounding the impurity region of the first conductivity type and having a portion exposed in the first main surface;
a control conductor provided for the second impurity region of the second conductivity type with an insulating film therebetween;
a first main electrode provided in contact with both the impurity region of the first conductivity type and the second impurity region of the second conductivity type;
a second main electrode provided at the first impurity region of the second conductivity type; and
a control electrode connected to the control conductor;
wherein the impurity region of the first conductivity type is adapted to internally have a total ballast resistance corresponding to an internal resistance thereof and having a value of 0.005 to 0.01 Ω
, as received by a current carrier of the first conductivity type moving through the impurity region of the first conductivity type.
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Abstract
An insulated-gate bipolar semiconductor device is provided wherein electric resistance generated in an emitter impurity region and between an emitter electrode and a region in the close vicinity of a gate takes a prescribe value irrespective of the distance of the emitter impurity region in direct contact with the emitter electrode in order to increase a load short circuit safe operation region without degrading the forward voltage drop and switching characteristic.
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Citations
26 Claims
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1. A vertical, insulated-gate bipolar semiconductor device, comprising:
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a semiconductor substrate having first and second main surfaces opposite each other;
an impurity region of a first conductivity type formed at the first main surface of the semiconductor substrate;
a first impurity region of a second conductivity type formed at the second main surface of the semiconductor substrate;
a second impurity region of the second conductivity type internally surrounding the impurity region of the first conductivity type and having a portion exposed in the first main surface;
a control conductor provided for the second impurity region of the second conductivity type with an insulating film therebetween;
a first main electrode provided in contact with both the impurity region of the first conductivity type and the second impurity region of the second conductivity type;
a second main electrode provided at the first impurity region of the second conductivity type; and
a control electrode connected to the control conductor;
wherein the impurity region of the first conductivity type is adapted to internally have a total ballast resistance corresponding to an internal resistance thereof and having a value of 0.005 to 0.01 Ω
, as received by a current carrier of the first conductivity type moving through the impurity region of the first conductivity type.- View Dependent Claims (3, 5, 7)
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2. A lateral, insulated-gate bipolar semiconductor device, comprising:
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a semiconductor substrate having first and second main surfaces opposite to each other;
an impurity region of a first conductivity type formed at the first main surface of the semiconductor substrate;
a first impurity region of a second conductivity type formed on the first main surface of the semiconductor substrate;
a second impurity region of the second conductivity type internally surrounding the impurity region of the first conductivity type and having a portion exposed in the first main surface;
a control conductor provided for the second impurity region of the second conductivity type with an insulating film therebetween;
a first main electrode provided in contact with both the impurity region of the first conductivity type and the second impurity region of the second conductivity type;
a second main electrode provided at the first impurity region of the second conductivity type; and
a control electrode connected to the control conductor, wherein the impurity region of the first conductivity type is adapted to internally have a total ballast resistance corresponding to an internal resistance thereof and having a value of 0.005 to 0.01 Ω
, as received by a current carrier of the first conductivity type.- View Dependent Claims (4, 6, 8)
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9. A vertical, insulated-gate bipolar semiconductor device, comprising:
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a semiconductor substrate having first and second main surfaces opposite to each other;
an impurity region of a first conductivity type formed at the first main surface of the semiconductor substrate;
a first impurity region of a second conductivity type formed on the second main surface of the semiconductor substrate;
a second impurity region of the second conductivity type internally surrounding the impurity region of the first conductivity type and having a portion exposed in the first main surface;
a control conductor provided for the second impurity region of the second conductivity type with an insulating film therebetween;
a first main electrode provided in contact with both the impurity region of the first conductivity type and the second impurity region of the second conductivity type;
a second main electrode provided at the first impurity region of the second conductivity type; and
a control electrode connected to the control conductor, wherein a region to increase a resistance of the impurity region of the first conductivity type is formed in a vicinity of a surface of the impurity region of the first conductivity type. - View Dependent Claims (11, 13, 15, 16, 19, 21, 23, 25)
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10. A lateral, insulated-gate bipolar semiconductor device, comprising:
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a semiconductor substrate having first and second main surfaces opposite to each other;
an impurity region of a first conductivity type formed at the first main surface of the semiconductor substrate;
a first impurity region of a second conductivity type formed on the second main surface of the semiconductor substrate;
a second impurity region of the second conductivity type internally surrounding the impurity region of the first conductivity type and having a portion exposed in the first main surface;
a control conductor provided for the second impurity region of the second conductivity type with an insulating film therebetween;
a first main electrode provided in contact with both the impurity region of the first conductivity type and the second impurity region of the second conductivity type;
a second main electrode provided at the first impurity region of the second conductivity type; and
a control electrode connected to the control conductor, wherein a region to increase a resistance of the impurity region of the first conductivity type is formed in a vicinity of a surface of the impurity region of the first conductivity type. - View Dependent Claims (12, 14, 17, 18, 20, 22, 24, 26)
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Specification