GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

• US 6,225,650 B1
• Filed: 03/24/1998
• Issued: 05/01/2001
• Est. Priority Date: 03/25/1997
• Status: Expired due to Term

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Cable Industries Limited (Mitsubishi Materials Corporation)
• Inventors: Miyashita, Keiji, Shibata, Takumi, Yahashi, Katsunori, Okagawa, Hiroaki, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Tadatomo, Kazuyuki, Ohuchi, Youichiro
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US09/046,638
• Time in Patent Office: 1,134 Days
• Field of Search: 257/194, 257/190, 257/195, 257/97, 257/79, 257/103, 257/76, 438/107, 438/28, 438/47, 438/604, 438/602, 438/606, 438/190, 117/101, 117/89
• US Class Current: 257/190
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

Claims

1. A GaN group crystal base member comprising a base substrate, a mask layer for controlling an extension of dislocation line partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover said mask layer, which is partially in direct contact with a non-masked region of the base substrate, wherein the base substrate has at least a surface layer represented by the formula:

2. A GaN group crystal base member comprising a base substrate, a mask layer for controlling an extension of dislocation line partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover said mask layer, which is partially in direct contact with a non-masked region of the base substrate, wherein the GaN group crystal layer is a first GaN group crystal layer, which further comprises a second mask layer partially covering the surface of said first GaN group crystal layer and a second GaN group crystal layer grown thereon to cover the second mask layer, which is partially in direct contact with a non-masked region of the first GaN group crystal layer.

3. A GaN group crystal base member to be used as a crystal substrate of a GaN semiconductor element, comprising a base substrate, a mask layer for controlling an extension of dislocation line partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover said mask layer, which is partially in direct contact with a non-masked region of the base substrate, wherein the base substrate permits growth of a GaN group crystal in the C axis orientation as the thickness direction, and the mask layer is made from a material substantially free from GaN group crystal growth, and wherein the GaN crystal layer has grown to cover the mask layer from a non-masked region as the growth starting point, and the mask layer forms a pattern wherein the width of the part having a low dislocation density within said crystal exceeds the width of an active part of said GaN group semiconductor element.

4. The GaN group crystal base member of claim 3, wherein a masked region and a non-masked region are alternately repeated periodically, said periodic repetition comprising at least a repetition in a <

11-20>

orientation of the GaN group crystal to be grown on said base substrate, a width B of said masked region in the <

11-20>

orientation and a width A of said non-masked region being defined by 1 μ

m≦

B≦

20 mm and 1 μ

m<

A+B≦

25 mm.

5. The GaN group crystal base member of claim 3, wherein the mask layer has plural openings on the surface thereof, the base substrate being exposed at the bottom of the openings, an arrangement pattern of said openings on the surface of the mask layer being one wherein the openings are positioned at intersections of net lines forming a quadrangle as the smallest constituent unit, said quadrangle being a square without a side in the <

11-20>

orientation of the GaN group crystal to be grown on the base substrate, or parallelogram.

6. The GaN group crystal base member of claim 3, wherein the ratio of a thickness T of the GaN group crystal layer covering the mask layer from the mask layer surface to a width W of the mask layer in the <

11-20>

orientation is T/W<

1.75.

7. The GaN group crystal base member of claim 3, wherein the GaN group semiconductor element is a GaN group light emitting diode.

8. A GaN group crystal base member to be used as a crystal substrate of a GaN semiconductor element, comprising a base substrate, a mask layer for controlling an extension of dislocation line partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover said mask layer, which is partially in direct contact with a non-masked region of the base substrate, wherein the base substrate permits growth of a GaN group crystal in the C axis orientation as the thickness direction, and the mask layer is made from a material substantially free from GaN group crystal growth, and wherein a masked region having, as outer shape lines, two parallel straight lines extending in the <

1-100>

orientation of the GaN group crystal to be grown on said base substrate, and the width between the two straight lines being not more than the width of said GaN group semiconductor element and not less than the width of an active part of said element.

9. The GaN group crystal base member of claim 8, wherein a masked region and a non-masked region are alternately repeated periodically, said periodic repetition comprising at least a repetition in a <

11-20>

orientation of the GaN group crystal to be grown on said base substrate, a width B of said masked region in the <

11-20>

orientation and a width A of said non-masked region being defined by 1 μ

m≦

B≦

20 mm and 1 μ

m<

A+B≦

25 mm.

10. The GaN group crystal base member of claim 8, wherein the mask layer has plural openings on the surface thereof, the base substrate being exposed at the bottom of the openings, an arrangement pattern of said openings on the surface of the mask layer being one wherein the openings are positioned at intersections of net lines forming a quadrangle as the smallest constituent unit, said quadrangle being a square without a side in the <

11-20>

orientation of the GaN group crystal to be grown on the base substrate, or parallelogram.

11. The GaN group crystal base member of claim 8, wherein the ratio of a thickness T of the GaN group crystal layer covering the mask layer from the mask layer surface to a width W of the mask layer in the <

11-20>

orientation is T/W<

1.75.

12. The GaN group crystal base member of claim 8, wherein the GaN group semiconductor element is a GaN group stripe laser, the width of said active part is the width of a stripe part in the stripe laser, and the direction of the extension of the two parallel lines is the longitudinal direction of the stripe part in the stripe laser.