Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes
First Claim
Patent Images
1. Structure comprising:
- a micro-electronic component produced in a thin film of a difficult to etch semiconductor material rigidly fixed onto a front face of a first substrate made of a material easy to etch, a rear face of said first substrate supporting a rear electrode; and
a metallized through hole extending from the rear face of said first substrate through said thin film and electrically connecting the rear electrode of the first substrate to an electrode of the micro-electronic component, wherein the material difficult to etch comprises at least one of silicon carbide and gallium nitride.
1 Assignment
0 Petitions
Accused Products
Abstract
The invention relates to a structure comprising a micro-electronic component (20) produced in a semi-conductor material difficult to etch. This structure is obtained by rigidly fixing a thin film (12) of the semi-conductor material that is difficult to etch onto the surface before attaching a first substrate made of a material that is easy to etch and which serves as a support. The micro-electronic component (20) is produced in the thin film (12) and a hole (33) passing right through is etched in the structure and metallized (35) in such a way that it electrically connects an electrode (18) formed on the back surface of the first substrate to an electrode (24) of the micro-electronic component (20).
106 Citations
10 Claims
-
1. Structure comprising:
-
a micro-electronic component produced in a thin film of a difficult to etch semiconductor material rigidly fixed onto a front face of a first substrate made of a material easy to etch, a rear face of said first substrate supporting a rear electrode; and
a metallized through hole extending from the rear face of said first substrate through said thin film and electrically connecting the rear electrode of the first substrate to an electrode of the micro-electronic component, wherein the material difficult to etch comprises at least one of silicon carbide and gallium nitride. - View Dependent Claims (3, 7, 8, 9, 10)
-
-
2. Structure comprising:
-
a micro-electronic component produced in a thin film of a difficult to etch semiconductor material rigidly fixed onto a front face of a first substrate made of a material easy to etch, a rear face of said first substrate supporting a rear electrode, and a metallized through hole extending from the rear face of said first substrate through said thin film and electrically connecting the rear electrode of the first substrate to an electrode of the micro-electronic component, wherein said thin film comprises a stack of layers of materials selected from the group consisting of silicon carbide and gallium nitride, said layers having different electrical conductivities. - View Dependent Claims (4, 5, 6)
-
Specification