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Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes

  • US 6,225,651 B1
  • Filed: 06/11/1998
  • Issued: 05/01/2001
  • Est. Priority Date: 06/25/1997
  • Status: Expired due to Term
First Claim
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1. Structure comprising:

  • a micro-electronic component produced in a thin film of a difficult to etch semiconductor material rigidly fixed onto a front face of a first substrate made of a material easy to etch, a rear face of said first substrate supporting a rear electrode; and

    a metallized through hole extending from the rear face of said first substrate through said thin film and electrically connecting the rear electrode of the first substrate to an electrode of the micro-electronic component, wherein the material difficult to etch comprises at least one of silicon carbide and gallium nitride.

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