Leaky lower interface for reduction of floating body effect in SOI devices
First Claim
1. A semiconductor device comprising:
- an insulating layer made of insulating material;
a semiconductor layer on the insulating layer, forming an interface therebetween, the semiconductor layer being made of a semiconductor material and including a body region of a first conductivity type and a source region of a second conductivity type, the source region adjoining the body region; and
an altered interface region along at least a portion of the interface between the semiconductor region and the insulating layer, the altered interface region electrically connecting the source region and the body region.
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Accused Products
Abstract
A silicon on insulator (SOI) device includes an electrically-conducting interface region along a portion of the interface between the insulator and a semiconductor layer atop the insulator. The electrically-conducting interface region provides a “leaky” electrical coupling between the body and source regions of a transistor device such as a “MOSFET”, thereby reducing floating body effects of the device. A method of forming such a semiconductor device includes forming the electrically-conducting interface region by damaging or implanting materials in the insulator and/or the semiconductor in the vicinity of the interface therebetween. The method may include producing a stepped interface region, such as by etching, in order to aid properly locating the transistor device relative to the electrically-conducting interface region.
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Citations
18 Claims
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1. A semiconductor device comprising:
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an insulating layer made of insulating material;
a semiconductor layer on the insulating layer, forming an interface therebetween, the semiconductor layer being made of a semiconductor material and including a body region of a first conductivity type and a source region of a second conductivity type, the source region adjoining the body region; and
an altered interface region along at least a portion of the interface between the semiconductor region and the insulating layer, the altered interface region electrically connecting the source region and the body region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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an insulating layer made of insulating material;
a semiconductor layer on the insulating layer, forming an interface therebetween, the semiconductor layer being made of a semiconductor material and including a body region of a first conductivity type and a source region of a second conductivity type, the source region adjoining the body region; and
an altered interface region along at least a portion of the interface between the semiconductor region and the insulating layer, the altered interface region electrically connecting the source region and the body region;
wherein the interface has a topographically uneven stepped region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification