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Non-uniform gate/dielectric field effect transistor

  • US 6,225,669 B1
  • Filed: 09/30/1998
  • Issued: 05/01/2001
  • Est. Priority Date: 09/30/1998
  • Status: Expired due to Term
First Claim
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1. A transistor comprising:

  • a semiconductor substrate;

    a source region and a drain region formed within the semiconductor substrate;

    a channel region defined within the semiconductor substrate extending between the source region and the drain region;

    a gate dielectric layer formed on the substrate above the channel region, the gate dielectric layer having a non-uniform thickness along a length of the channel region; and

    a gate material layer formed above the gate dielectric layer;

    wherein the transistor is an N-type metal-oxide-semiconductor (NMOS) transistor, and the thickness of the gate dielectric layer decreases along the channel region from the source region to the drain region.

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