Flip chip package for micromachined semiconductors
First Claim
1. A semiconductor package for containing a micromachined semiconductor device, comprising:
- a) a first substrate having a cavity located therein, the micromachined semiconductor device located adjacent the first substrate;
b) a second substrate, located adjacent the first substrate;
c) a third substrate, located adjacent the second substrate;
d) a plurality of vias, extending through the first, second and third substrates;
e) a plurality of conductor lines, located on the first and second substrate and electrically connected to the vias;
f) electrical connection means, located between the vias and the micromachined semiconductor device, for electrically connecting the vias to the semiconductor device; and
g) a solder ring, located between the micromachined semiconductor device and the first substrate for hermetically sealing the micromachined semiconductor device.
1 Assignment
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Accused Products
Abstract
A hermetic multilayered ceramic semiconductor package for micromachined semiconductor devices. A low temperature co-fired ceramic assembly has a cavity and a top and bottom surface. Several vias extend between the top and bottom surfaces and several solder spheres are located on the top surface and are electrically connected to the vias. A micromachined semiconductor device abuts the bottom surface and covers the cavity such that a movable portion of the micromachined semiconductor device is unconstrained to move within the cavity. Solder is used to connect the vias to solder bumps on the semiconductor device. A seal ring is located between the micromachined semiconductor device and the ceramic assembly for hermetically sealing the micromachined semiconductor device.
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Citations
4 Claims
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1. A semiconductor package for containing a micromachined semiconductor device, comprising:
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a) a first substrate having a cavity located therein, the micromachined semiconductor device located adjacent the first substrate;
b) a second substrate, located adjacent the first substrate;
c) a third substrate, located adjacent the second substrate;
d) a plurality of vias, extending through the first, second and third substrates;
e) a plurality of conductor lines, located on the first and second substrate and electrically connected to the vias;
f) electrical connection means, located between the vias and the micromachined semiconductor device, for electrically connecting the vias to the semiconductor device; and
g) a solder ring, located between the micromachined semiconductor device and the first substrate for hermetically sealing the micromachined semiconductor device. - View Dependent Claims (2, 3, 4)
a) a plurality of bond pads located on the micromachined semiconductor; and
b) a plurality of solder joints connected between the bond pads and the vias.
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3. The semiconductor package according to claim 1, wherein the substrate is a low temperature co-fired ceramic.
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4. The semiconductor package according to claim 1, wherein a plurality of solder spheres are located on the third substrate and connected to the vias.
Specification