Making epitaxial semiconductor device
First Claim
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1. An epitaxial silicon semiconductor wafer, comprising:
- a silicon substrate;
a first crystal or amorphous silicon semiconductor layer of P or N type, which is provided on said silicon substrate by chemical vapor deposition and has a high degree of purity so that said first semiconductor layer has a specific resistance value two to five hundred times larger than that of said silicon substrate, thereby forming a first light reflecting face between said silicon substrate and said first semiconductor layer;
a second crystal or amorphous semiconductor layer of an opposite type of said first semiconductor layer, which is provided on said first semiconductor layer and has a high degree of purity so that said second semiconductor layer has a specific resistance value two to five hundred times larger than that of said silicon substrate; and
a second light reflecting face provided on said second semiconductor layer and made from a silicon insulator film, which allows incoming light to pass therethrough and sends back light reflected by said first light reflecting face, toward said first light reflecting face.
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Abstract
An epitaxial semiconductor wafer characterized by making the P-N junction face which having either flat or uneven face in a manner of uniformed thickness from the top surface, due to making a P or N type first layer by the Chemical Vapor Deposition on the basic plate and also to making a N or P type secondary layer on said first layer, while both of the layers being highly and pure controlled silicon, and the light reflectors being located at the out side of said each P or N type layer for concentrating the incoming light to the P-N junction portion.
82 Citations
2 Claims
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1. An epitaxial silicon semiconductor wafer, comprising:
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a silicon substrate;
a first crystal or amorphous silicon semiconductor layer of P or N type, which is provided on said silicon substrate by chemical vapor deposition and has a high degree of purity so that said first semiconductor layer has a specific resistance value two to five hundred times larger than that of said silicon substrate, thereby forming a first light reflecting face between said silicon substrate and said first semiconductor layer;
a second crystal or amorphous semiconductor layer of an opposite type of said first semiconductor layer, which is provided on said first semiconductor layer and has a high degree of purity so that said second semiconductor layer has a specific resistance value two to five hundred times larger than that of said silicon substrate; and
a second light reflecting face provided on said second semiconductor layer and made from a silicon insulator film, which allows incoming light to pass therethrough and sends back light reflected by said first light reflecting face, toward said first light reflecting face. - View Dependent Claims (2)
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Specification
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Current AssigneeMitsuhiro Maruyama, Shigeo Yamamoto
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Original AssigneeMitsuhiro Maruyama, Shigeo Yamamoto
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InventorsYamamoto, Shigeo, Maruyama, Mitsuhiro
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Primary Examiner(s)Smith, Matthew
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Assistant Examiner(s)LEE, GRANVILL D
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Application NumberUS09/161,494Time in Patent Office953 DaysField of Search438/535, 438/48, 438/492-503, 219/121.6, 313/525, 313/495, 313/106, 264/400, 252/193, 148/33.5US Class Current148/33.5CPC Class CodesH01L 31/103 the potential barrier being...
