Thin film deposition apparatus

• US 6,228,439 B1
• Filed: 07/06/2000
• Issued: 05/08/2001
• Est. Priority Date: 02/16/1998
• Status: Expired due to Term

• Current Assignee: Anelva Corporation (Canon Inc.)
• Original Assignee: Anelva Corporation (Canon Inc.)
• Inventors: Watanabe, Naoki, Watabe, Osamu, Hayashida, Hideki
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/610,721
• Time in Patent Office: 306 Days
• Field of Search: 118/719, 118/695, 118/715, 118/723 R, 118/718, 156/345, 427/569, 427/585, 427/248.1, 438/706, 438/689
• US Class Current: 427/585
• CPC Class Codes: C23C 14/56 Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: G11B 5/85 Coating a support with a magnetic layer by vapour deposition

Abstract

An apparatus for manufacturing information recording disks is disclosed. The apparatus includes a deposition chamber for providing an undercoat layer to a substrate to be treated, a deposition chamber for providing a magnetic recording layer on the substrate, a deposition chamber for providing a protective layer over the recording layer and a holding chamber for removing the resulting information recording disk upon completion of the process steps. The deposition chamber which provides the protective layer includes a system which selectively introduces heated plasma and oxygen into the interior of the deposition chamber to clean the interior surfaces of the chamber while the apparatus is in use. The heated plasma and oxygen interact with any excess protective layer material, resulting in the formation of a gas which is removed from the interior of the deposition chamber by a pumping system. The holding chamber is used to remove and maintain the processed information recording disk while the interior of the deposition chamber is being cleaned.

Claims

1. A method for processing substrates comprising,

placing at least one substrate in a substrate processing system having a plurality of processing chambers, at least two of said processing chambers being deposition chambers each having a deposition apparatus for depositing a thin film coating onto substrates within said deposition chamber and having a cleaning apparatus for removing film deposited onto the interior surfaces of said deposition chamber, said processing system further comprising a transport system for sequentially moving substrates between said processing chambers, said transport system comprising a plurality of individual carriages for holding substrates undergoing processing in said system, the total number of carriages of said transport system being less than the number of processing chambers such that at least one processing chamber is always empty;

moving a first substrate into a first of said deposition chambers, while said second deposition chamber is kept empty;

depositing a thin film coating onto said first substrate in said first deposition chamber and simultaneously cleaning interior surfaces of said second deposition chamber;

transporting said first substrate from said first deposition chamber to said second deposition chamber, such that said first deposition chamber is empty;

depositing a thin film coating on said first substrate in said second deposition chamber and simultaneously cleaning interior surfaces of said first deposition chamber.

2. The method of claim 1 wherein the number of carriages in said transport system is one less than the total number of processing chambers in said substrate processing system.

3. The method of claim 1 wherein said substrate processing system comprises at least one other substrate processing chamber and wherein a second substrate is maintained within said at least one other processing chamber while said first substrate is processed in said first and second deposition chambers.

4. A method of processing substrates comprising:

placing a plurality of substrates on a plurality of substrate transport carriages adapted to move sequentially through a plurality of substrate processing chambers, at least two of said substrate processing chambers having a deposition apparatus for depositing a thin film coating onto said substrates and a cleaning apparatus for cleaning interior surfaces of said chambers, the number of substrate transport carriages being less than the total number of processing chambers;

moving one of said substrates into a first deposition chamber and simultaneously moving a second substrate into a third processing chamber while keeping a second deposition chamber empty;

depositing a thin film coating onto said first substrate in said first deposition chamber while operating the cleaning apparatus in said second deposition chamber and while processing said second substrate in said third processing chamber;

transporting said first substrate from said first deposition chamber to said second deposition chamber while continuing to process said second substrates in said third processing chamber, such that said first deposition chamber is empty;

depositing a thin film coating onto said first substrate in said second deposition chamber while operating the cleaning apparatus in said second deposition chamber and while continuing to process said second substrate in said third processing chamber.

5. The method of claim 4 wherein the number of substrate transport carriages is one less than the number of processing chambers.