Wafer-level package and methods of fabricating

• US 6,228,687 B1
• Filed: 06/28/1999
• Issued: 05/08/2001
• Est. Priority Date: 06/28/1999
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Wood, Alan G., Akram, Salman
• Primary Examiner(s): Picardat, Kevin M.
• Assistant Examiner(s): COLLINS, DEVEN M
• Application Number:
  US09/340,513
• Time in Patent Office: 680 Days
• Field of Search: 438/106, 438/125, 438/108, 438/127, 438/612, 438/613
• US Class Current: 438/125
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/06136 Covering only the central area of the surface to be connected, i.e. central arrangements
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/12 Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01075 Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A carrier for use in a chip-scale package, including a polymeric film with apertures defined therethrough. The apertures, which are alignable with corresponding bond pads of a semiconductor device, each include a quantity of conductive material extending substantially through the length thereof. The carrier may also include laterally extending conductive traces in contact with or otherwise in electrical communication with the conductive material in the apertures of the carrier. Contacts may be disposed on a backside surface of the carrier. The contacts may communicate with the conductive material disposed in the apertures of the carrier. A conductive bump, such as a solder bump, may be disposed adjacent each or any of the contacts. A chip-scale package including the carrier of the present invention is also within the scope of the present invention. Such a chip-scale package includes a semiconductor device invertedly disposed over the carrier such that bond pads of the semiconductor device substantially align with apertures formed through the carrier. Thus, the bond pads of the semiconductor device may communicate with the conductive bumps by means of the conductive material disposed in the apertures of the carrier. Methods of fabricating the carrier of the present invention and methods of fabricating chip-scale packages including the carrier are also within the scope of the present invention.

Claims

1. A method of fabricating a chip-scale package, comprising:

positioning a preformed polymeric film, including at least one aperture extending substantially longitudinally therethrough, adjacent an active surface of a semiconductor device such that a corresponding bond pad of said semiconductor device is exposed through said at least one aperture; and

disposing conductive material in said at least one aperture.

2. The method of claim 1, further comprising adhering said polymeric film to said active surface.

3. The method of claim 1, further comprising defining said at least one aperture through said polymeric film.

4. The method of claim 3, wherein said defining comprises etching.

5. The method of claim 3, wherein said defining comprises laser-drilling.

6. The method of claim 3, wherein said defining occurs subsequent to said positioning.

7. The method of claim 3, wherein said defining occurs substantially simultaneously with said disposing said polymeric film.

8. The method of claim 1, wherein said disposing said conductive material comprises bonding said conductive material to said corresponding bond pad.

9. The method of claim 1, wherein said disposing said conductive material comprises depositing said conductive material onto said polymeric film.

10. The method of claim 9, wherein said depositing comprises chemical vapor depositing or physical vapor depositing said conductive material.

11. The method of claim 1, wherein said disposing said conductive material comprises disposing a conductive structure within said at least one aperture.

12. The method of claim 1, further comprising disposing at least one contact at an end of said conductive material opposite said semiconductor device.

13. The method of claim 12, further comprising disposing a conductive structure adjacent said at least one contact.

14. The method of claim 13, wherein said disposing said conductive structure comprises applying solder to said at least one contact.

15. The method of claim 1, further comprising disposing at least one conductive trace on said polymeric film and in communication with said conductive material.

16. The method of claim 15, further comprising disposing at least one contact in communication with said at least one conductive trace.

17. The method of claim 16, further comprising disposing a conductive structure adjacent said at least one contact.

18. The method of claim 17, wherein said disposing said conductive structure comprises applying solder to said contact.

19. The method of claim 12, wherein said disposing said at least one contact comprises fabricating said at least one contact.

20. The method of claim 19, wherein said fabricating comprises:

disposing at least one layer of contact material onto said polymeric film;

disposing a mask, including apertures therethrough, over said at least one layer; and

removing contact material through said apertures to define said at least one contact.

21. The method of claim 20, wherein said disposing said at least one layer comprises physical vapor depositing or chemical vapor depositing said contact material.

22. The method of claim 20, wherein said disposing said mask comprises disposing a mask material over an exposed surface of said polymeric film and defining said apertures through said mask material.

23. The method of claim 22, wherein said disposing said mask material comprises disposing a photoresist.

24. The method of claim 22, wherein said defining said apertures comprises exposing and developing selected regions of said mask material.

25. The method of claim 20, wherein said removing comprises etching said contact material.

26. The method of claim 15, wherein said disposing said at least one conductive trace comprises fabricating said at least one conductive trace.

27. The method of claim 26, wherein said fabricating comprises:

disposing a layer of conductive material onto said polymeric film;

disposing a mask, including a plurality of apertures defined therethrough, over said layer; and

removing selected regions of said layer of conductive material through said plurality of apertures.

28. The method of claim 27, wherein said disposing said layer comprises physical vapor deposing or chemical vapor deposing said conductive material.

29. The method of claim 27, wherein said disposing said mask comprises disposing a mask material onto said polymeric film and defining said plurality of apertures through said mask material.

30. The method of claim 29, wherein said disposing said mask material comprises disposing a photoresist.

31. The method of claim 30, wherein said defining comprises exposing and developing selected regions of said photoresist.

32. The method of claim 27, wherein said removing said conductive material comprises etching regions of said layer of conductive material exposed through said plurality of apertures.

33. The method of claim 1, further comprising placing said polymeric film at least partially on a peripheral edge of said semiconductor device.

34. The method of claim 17, further comprising disposing a layer of polymeric material laterally adjacent said at least one conductive structure.

35. The method of claim 17, further comprising disposing a conductive elastomer over said at least one conductive structure.

36. The method of claim 35, further comprising disposing at least one other conductive structure in contact with said conductive elastomer, opposite said at least one conductive structure.

37. A method for fabricating a chip-scale package, comprising:

disposing photoimagable polymeric material onto a surface of a semiconductor device;

forming a polymeric film from said photoimagable polymeric material, said polymeric film having at least one aperture extending substantially longitudinally therethrough to expose a corresponding bond pad of said semiconductor device and having an exposed surface; and

disposing conductive material in said at least one aperture.

38. The method of claim 37, wherein said forming comprises selectively exposing regions of said photoimagable polymeric material to electromagnetic radiation.

39. The method of claim 37, further comprising defining said at least one aperture through said polymeric film.

40. The method of claim 39, wherein said defining comprises etching.

41. The method of claim 39, wherein said defining comprises laser-drilling.

42. The method of claim 39, wherein said defining is effected after said forming.

43. The method of claim 39, wherein said defining is effected substantially simultaneously with said forming.

44. The method of claim 37, further comprising disposing at least one conductive trace on said polymeric film and in communication with said conductive material.

45. The method of claim 44, further comprising disposing at least one contact in communication with said conductive trace.

46. The method of claim 45, further comprising disposing a conductive structure adjacent said at least one contact.

47. The method of claim 46, further comprising disposing a layer of polymeric material laterally adjacent said at least one conductive structure.

48. The method of claim 46, further comprising disposing a conductive elastomer over said at least one conductive structure.

49. The method of claim 48, further comprising disposing at least one other conductive structure in contact with said conductive elastomer, opposite said at least one conductive structure.

50. The method of claim 37, wherein said forming comprises forming said polymeric film so as to extend at least partially over a peripheral edge of said semiconductor device.