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Method of making an antireflective structure

  • US 6,228,740 B1
  • Filed: 11/19/1999
  • Issued: 05/08/2001
  • Est. Priority Date: 04/18/1997
  • Status: Expired due to Term
First Claim
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1. A method of forming a structure comprising:

  • forming a first layer on a semiconductor substrate, said first layer including at least one hemispherical grain (HSG) polysilicon layer, said at least one HSG polysilicon layer having a thickness of less than about 500 Å

    ; and

    forming a second layer disposed conformably upon said first layer, said second layer, composed of a nitride material having a thickness in a range from about 200 Å

    to about 1,000 Å

    .

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