Chip carrier to allow electron beam probing and fib modifications

• US 6,229,319 B1
• Filed: 11/12/1998
• Issued: 05/08/2001
• Est. Priority Date: 03/22/1996
• Status: Expired due to Fees

• Current Assignee: Sun Microsystems Incorporated (Oracle Corporation)
• Original Assignee: Sun Microsystems Incorporated (Oracle Corporation)
• Inventors: Johnson, Douglas S.
• Primary Examiner(s): KARLSEN, ERNEST F
• Application Number:
  US09/191,278
• Time in Patent Office: 908 Days
• Field of Search: 324/750, 324/751, 324/752, 324/754, 324/765, 324/755
• US Class Current: 324/754.09
• CPC Class Codes: G01R 1/0483 Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips for IC's with connecting points around the edges only G01R1/0433
• CPC Class Codes: G01R 31/307 of integrated circuits

Abstract

Disclosed are a die carrier and associated method for conducting probe beam tests on chips designed to be packaged in flip-chip packages. The die carrier is a specially modified membrane type carrier that includes a probe access region, such as an opening, in the membrane. A die to be tested is mounted in the die carrier such that its I/O pads make electrical contact with corresponding bump contacts on the membrane. The die/carrier assembly is then mounted in a test socket provided on a chip testing apparatus such that electrical I/O signals can be provided to and from an external test circuit. While the die is being electrical tested, a probe beam is directed through the probe access region and onto the chip active surface. In this manner, the chip active surface is probed while exposed to electrical stimulus.

Claims

1. A die carrier for allowing probing of an active region of a die including peripheral input/output bump pads located about the periphery of the active region, the die carrier comprising:

a membrane having

a probe access region for making substantially all of the die'"'"'s active region accessible to a probe,

a plurality of peripheral bump contacts adjacent to the probe access region and arranged to make electrical contact with the peripheral bump pads of the die, and

a plurality of socket contacts electrically connected to said peripheral bump contacts; and

a membrane carrier supporting said membrane and having an opening corresponding, at least in part, to the location of said probe access region of the membrane, wherein the die carrier, including the opening in the membrane carrier together with the probe access region of the membrane, allows probe beam radiation to directly probe the die'"'"'s active region.

2. The die carrier of claim 1 wherein the membrane carrier has a structure adapted to connect with a test socket of a test apparatus such that the socket contacts make electrical contact with corresponding contacts on the test socket.

3. The die carrier of claim 1 wherein the membrane carrier comprises anodized aluminum.

4. The die carrier of claim 1 further comprising a closing member adapted to engage the rigid membrane carrier such that at least some of the peripheral bump pads on said die are held in electrical contact with said peripheral bump contacts of the membrane.

5. The die carrier of claim 1 wherein the membrane comprises polyimide.

6. The die carrier of claim 1 wherein the membrane includes multiple layers of insulator separating traces connecting the peripheral bump contacts to the socket contacts.

7. The die carrier of claim 1 further comprising an area bump contact section spanning said probe access region and including one or more area bump contacts arranged to line up with one or more area bump pads on the die, wherein the one or more area bump pads are located inside the periphery of said die active region.

8. The die carrier of claim 7 wherein the area bump contacts supply power, ground, or both power and ground to the area bump pads on the die.

9. The die carrier of claim 1 wherein the active region of said die has one or more area bump pads located inside the periphery of said die, and further comprising an external mechanical probe to provide electrical contact to one or more of said area bump pads.

10. The die carrier of claim 1 wherein the die is designed for use in a flip-chip package.

11. A die carrier for allowing probing of an active region of a flip-chip die including peripheral input/output bump pads located about the periphery of the active region, the die carrier comprising:

a membrane having

a probe access region for making substantially all of the flip-chip die'"'"'s active region accessible to a probe,

a plurality of peripheral bump contacts adjacent to the probe access region and arranged to make electrical contact with the peripheral bump pads of the flip-chip die, and

a plurality of socket contacts electrically connected to said peripheral bump contacts; and

a membrane carrier supporting said membrane and having an opening corresponding, at least in part, to the location of said probe access region of the membrane, wherein the die carrier, including the opening in the membrane carrier together with the probe access region of the membrane, allows probe beam radiation to directly probe the die'"'"'s active region.

12. The die carrier of claim 11 wherein the membrane carrier has a structure adapted to connect with a test socket of a test apparatus such that the socket contacts make electrical contact with corresponding contacts on the test socket.

13. The die carrier of claim 11 wherein the membrane carrier comprises anodized aluminum.

14. The die carrier of claim 11 further comprising a closing member adapted to engage the rigid membrane carrier such that at least some of the peripheral bump pads on said flip-chip die are held in electrical contact with said peripheral bump contacts of the membrane.

15. The die carrier of claim 11 wherein the membrane comprises polyimide.

16. The die carrier of claim 11 wherein the membrane includes multiple layers of insulator separating traces connecting the peripheral bump contacts to the socket contacts.

17. The die carrier of claim 11 further comprising an area bump contact section spanning said probe access region and including one or more area bump contacts arranged to line up with one or more area bump pads on the flip-chip die, wherein the one or more area bump pads are located inside the periphery of said flip-chip die active region.

18. The die carrier of claim 17 wherein the area bump contacts supply power, ground, or both power and ground to the area bump pads on the flip-chip die.

19. The die carrier of claim 11 wherein the active region of said flip-chip die has one or more area bump pads located inside the periphery of said flip-chip die, and further comprising an external mechanical probe to provide electrical contact to one or more of said area bump pads.

20. The die carrier of claim 11 wherein the probe access region may comprise an opening in the membrane.