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Method of manufacturing floating gate of stacked-gate nonvolatile memory unit

  • US 6,232,184 B1
  • Filed: 09/10/1999
  • Issued: 05/15/2001
  • Est. Priority Date: 08/02/1999
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a gate electrode, comprising the steps of:

  • providing a substrate;

    forming a gate oxide layer over the substrate;

    forming a polysilicon layer over the gate oxide layer;

    etching the polysilicon layer to form a gate electrode above the gate oxide layer and at the same time depositing polymeric material on sidewalls of the gate electrode and over the gate oxide layer;

    performing a chemical dry etching operation to remove the plylmeric material and to shape the gate electrode; and

    performing a thermal oxidation to form an oxide layer over the gate electrode.

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