Sensor with temperature-dependent measuring resistor and its use for temperature measurement

• US 6,232,618 B1
• Filed: 12/22/1998
• Issued: 05/15/2001
• Est. Priority Date: 12/23/1997
• Status: Expired due to Fees

• Current Assignee: Heraeus Electro-Nite International N.V. (Heraeus Holding GMBH)
• Original Assignee: Heraeus Electro-Nite International N.V. (Heraeus Holding GMBH)
• Inventors: Müller, Andreas, Wienand, Karlheinz
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US09/218,659
• Time in Patent Office: 875 Days
• Field of Search: 438/14, 257/401, 257/48, 216/16, 73/250.3, 732/04, 338/306, 205/717, 374/12, 374/171, 374/185
• US Class Current: 257/48
• CPC Class Codes: G01K 7/183 characterised by the use of the resistive element

Abstract

A temperature-dependent measuring resistor is connected to a reference resistor in series, wherein this series connection is flowed through by a constant impressed current. A connection point located between the two resistors is connected to the N-input of a first feedback differential amplifier, whose P-input is supplied with direct current voltage tapped from a voltage divider. During a temperature increase in the area of the measuring resistor, the potential increases at the output of the first differential amplifier, which delivers the constant impressed current and is connected to the measuring resistor, while the potential at the output of the differential amplifier falls when the temperature falls. The temperature-dependent voltage signal that is output at the differential amplifier is supplied in subtracting connection to the P-input of an after-connected second differential amplifier, whose output is connected to a measurement unit for measuring the voltage characteristic of the temperature. In a preferred embodiment, the measuring resistor made of platinum or of a platinum-based alloy is directly mounted on a substrate made of ceramic (Al₂O₃), which forms a thin-layer component. On the surface of the thin-layer component the reference resistor and the micro-module are mounted in addition. The temperature sensor has, because of an evaluation circuit constructed as a micro-module, a compact structural form and can be used up to a temperature of approx. 300° C.

Claims

1. A sensor comprising a temperature-dependent measuring resistor connected by a connection contact to an evaluation circuit and flowed through by an impressed current, wherein a voltage signal falling across the measuring resistor is determined, said voltage signal relating to the temperature of the measuring resistor in an at least approximately linear proportion, wherein the measuring resistor (1) is electrically connected at one end (2) both with a constant current source and with an electrical circuit for outputting a temperature-voltage signal, a connection point (26) of a series connection composed of the measuring resistor (1) and a reference resistor (7) being connected to the electrical circuit, wherein the temperature-dependent measuring resistor (1) and the reference resistor (7) are each arranged as discrete structural components on a substrate (33) having an electrically insulating surface, and wherein connection-contact banks (2, 3) for the measuring resistor (1) and connection contact banks (5, 6) for the reference resistor (7) are each connected via strip conductors or wire connections to the elevation circuit also arranged on the substrate (33) in a micro-module (34), wherein the micro-module (34) is constructed in silicon technology, and the sensor operates at temperatures up to about 300°

C.

2. The sensor according to claim 1, wherein the substrate (33) is constructed as an electronically insulating ceramic.

3. The sensor according to claim 2, wherein the ceramic comprises Al₂O₃.

4. The sensor according to claim 1, wherein the temperature dependent measuring resistor is manufactured by thin layer technology.

5. The sensor according to claim 1, wherein the measuring resistor (1) has a resistor layer made of platinum or of a platinum-based alloy.

6. The sensor according to claim 4, wherein the measuring resistor (1) forms, together with a substrate (33), a thin layer component, on whose surface the reference resistor (7) and the micro-module (34) are attached in addition.

7. The sensor according to claim 1, wherein the reference resistor (7) is manufactured by thin layer technology.

8. The sensor according to claim 1, wherein a metal layer of the reference resistor (7) has a temperature-independent resistor progression.

9. The sensor according to claim 8, wherein the reference resistor (7) comprises an alloy made of nickel-chromium or constantan.

10. The sensor according to claim 9, wherein a substrate comprising ceramic functions as a support for a thin-layer measuring resistor (1).

11. The sensor according to claim 1, wherein both the measuring resistor (1) and the reference resistor (7) are mounted on a substrate (33) by thick film technology.

12. The sensor according to claim 1, wherein SIMOX technology is used as the silicon technology.

13. An electric circuit for temperature measurement comprising a sensor according to claim 1 having a temperature-dependent measuring resistor (1) connected to a reference resistor (7) in series, wherein this series connection is flowed through by a constant impressed current, a connection point (26) located between both resistors is connected to an negative input (16) of a first feedback differential amplifier (13) that outputs the constant impressed current, and a positive input (15) of the first differential amplifier is supplied with direct current voltage tapped from a voltage divider, wherein during a temperature increase in an area of the measuring resistor (1) a potential at an output (19) of the first differential amplifier (13) connected to the measuring resistor (1) increases, while a potential at the output (19) of the differential amplifier (13) falls when the temperature falls, and a temperature-dependent voltage signal that is output at the differential amplifier (13) is supplied to a positive input (17) of an after-connected second differential amplifier (14) preset with an inverse feedback resistor (30), wherein an output of this second differential amplifier (14) is connected to a measurement unit for measuring a voltage characteristic of the temperature.