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Trench photosensor for a CMOS imager

  • US 6,232,626 B1
  • Filed: 02/01/1999
  • Issued: 05/15/2001
  • Est. Priority Date: 02/01/1999
  • Status: Expired due to Term
First Claim
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1. A photosensor for use in an imaging device, said photosensor comprising:

  • a doped layer of a first conductivity type formed in a substrate;

    a trench formed in said doped layer;

    a doped region of a second conductivity type formed at the sidewalls and bottom of said trench; and

    an insulating layer formed over said doped region.

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