Silicon-doped titanium wetting layer for aluminum plug

• US 6,232,665 B1
• Filed: 06/08/1999
• Issued: 05/15/2001
• Est. Priority Date: 03/18/1997
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kieu, Hoa, Ding, Peijun, Xu, Zheng, Yao, Gongda
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US09/328,117
• Time in Patent Office: 707 Days
• Field of Search: 257/764, 257/754, 257/751, 257/774, 257/765, 257/766, 257/758, 257/755, 257/775
• US Class Current: 257/764
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl₃ or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed “warm”, i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.

Claims

1. A metal plug for electrically contacting a conductor or semiconductor material on a workpiece, comprising:

a dielectric layer overlying the conductor or semiconductor material, wherein a hole extends through the dielectric layer, whereby the hole has a dielectric side wall;

a layer of silicon-doped titanium covering the side wall of the hole, wherein the silicon-doped titanium layer has a concentration of silicon no greater than 20% by weight; and

a layer of said metal overlying at least a portion of the silicon-doped titanium layer.

2. A plug according to claim 1, wherein the silicon-doped titanium layer has a concentration of silicon high enough to impede the interdiffusion of said metal and the titanium.

3. A plug according to claim 1, wherein said metal is aluminum.

4. A plug according to claim 3, wherein the silicon-doped titanium layer has a concentration of silicon high enough to impede the interdiffusion of the aluminum and the titanium.

5. A plug according to claim 3, wherein the silicon-doped titanium layer has a concentration of silicon high enough to substantially prevent the formation of titanium trialuminide (TiAl₃) at the boundary between the titanium layer and the aluminum layer.

6. A plug according to claim 1 wherein the silicon-doped titanium layer has a concentration of silicon in the range of 0.1% to 20% wt.

7. A plug according to claim 1 wherein the silicon-doped titanium layer has a concentration of silicon in the range of 5% to 10% wt.

8. A plug according to claim 1, wherein the silicon-doped titanium layer has an atomic molar ratio of titanium to silicon of at least 5.

9. A plug according to claim 1, wherein the silicon-doped titanium layer has a concentration of silicon low enough so that substantially no TiSi₂ forms in the silicon-doped titanium layer.

10. A plug according to claim 1, wherein the metal layer directly overlies the silicon-doped titanium layer, with no other layer of material between the metal layer and the silicon-doped titanium layer.

11. A plug according to claim 1, wherein the metal layer completely covers the silicon-doped titanium layer.

12. A plug according to claim 1, wherein the metal layer occupies most of the volume of the hole.