AlGaInN LED and laser diode structures for pure blue or green emission

• US 6,233,265 B1
• Filed: 07/31/1998
• Issued: 05/15/2001
• Est. Priority Date: 07/31/1998
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Bour, David Paul, Kneissl, Michael A.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US09/127,038
• Time in Patent Office: 1,019 Days
• Field of Search: 372/45, 372/46, 257/94, 257/97, 257/103, 257/190, 438/35, 438/29, 438/38
• US Class Current: 372/45.01
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Group III-V nitride semiconductors are used as optoelectronic light emitters. The semiconductor alloy InGaN is used as the active region in nitride laser diodes and LEDs, as its bandgap energy can be tuned by adjusting the alloy composition, to span the entire visible spectrum. InGaN layers of high-indium content, as required for blue or green emission are difficult to grow, however, because the poor lattice mismatch between GaN and InGaN causes alloy segregation. In this situation, the inhomogeneous alloy composition results in spectrally impure emission, and diminished optical gain. To suppress segregation, the high-indium-content InGaN active region may be deposited over a thick InGaN layer, substituted for the more typical GaN. First depositing a thick InGaN layer establishes a larger lattice parameter than that of GaN. Consequently, a high indium content heterostructure active region grown over the thick InGaN layer experiences significantly less lattice mismatch compared to GaN. Therefore, it is less likely to suffer structural degradation due to alloy segregation. Thus, the thick GaN structure enables the growth of a high indium content active region with improved structural and optoelectronic properties, leading to LEDs with spectrally pure emission, and lower threshold laser diodes.

Claims

1. A semiconductor structure, comprising:

a nucleation layer;

a thick InGaN layer grown directly on the nucleation layer; and

an active layer formed over the thick InGaN layer, the active layer comprising at least one quantum well.

2. The semiconductor structure according to claim 1, further comprising at least one group III-V nitride layer formed over the active layer.

3. The semiconductor structure according to claim 2, wherein the thick InGaN layer and the at least one group III-V nitride layer form confinement layers, confining injected carriers to the active layer.

4. The semiconductor structure according to claim 1, wherein the active layer includes a waveguiding layer and a quantum well active region.

5. The semiconductor structure according to claim 1, wherein the nucleation layer includes a plurality of nucleation sub-layers.

6. The semiconductor structure according to claim 1, wherein the active layer comprises InGaN.

7. The semiconductor structure according to claim 1, wherein the thick InGaN layer is n-type doped.

8. The semiconductor structure according to claim 1, wherein the semiconductor structure is an optoelectronic device.

9. The semiconductor structure according to claim 1, wherein the semiconductor structure emits light in the blue region of the spectrum.

10. The semiconductor structure according to claim 1, wherein the semiconductor structure emits light with a wavelength within a range including 430 nm to 650 nm.

33. The semiconductor structure according to claim 1, wherein the active layer comprises a plurality of quantum wells.

34. The semiconductor structure according to claim 33, wherein the quantum wells each have a thickness of about 10 Å

.

11. An image forming apparatus that forms an image on a light sensitive medium, the image forming apparatus comprising at least one light source that includes a semiconductor structure including:

a nucleation layer;

a thick InGaN layer grown directly on the nucleation layer; and

an active layer formed over the thick InGaN layer, the active layer comprising at least one quantum well.

12. The image forming apparatus according to claim 11, wherein the image forming apparatus includes at least one of a laser printer, a digital printer, a display device and an illumination device.

13. The image forming apparatus according to claim 11, wherein the at least one light source includes at least one of a raster output scanner and a multiple element print bar.

14. A data storage apparatus that stores data on a medium, the data storage apparatus comprising at least one light source that includes a semiconductor structure including:

a nucleation layer;

a thick InGaN layer grown directly on the nucleation layer; and

an active layer formed over the thick InGaN layer, the active layer comprising at least one quantum well.

15. The data storage device according to claim 14, wherein the data storage apparatus comprises a magneto-optical storage device.

16. The data storage device according to claim 14, wherein the data storage apparatus comprises any one of a CD-ROM drive and a DVD drive.

17. The data storage device according to claim 14, wherein the medium comprises a magneto-optical disk.

18. A communications apparatus that communicates information through a communications transmission medium, the communications apparatus comprising at least one light source that includes a semiconductor structure including:

a nucleation layer;

a thick InGaN layer grown directly on the nucleation layer; and

an active layer formed over the thick InGaN layer, the active layer comprising at least one quantum well.

19. The communications apparatus according to claim 18, wherein the communications apparatus comprises a fiber optic network.

20. The communications apparatus according to claim 18, wherein the at least one light source comprises at least one of a fiber optic emitter and a fiber optic repeater.

21. A method of forming a semiconductor structure, comprising the steps of:

forming a nucleation layer;

forming a thick InGaN layer directly on the nucleation layer; and

forming an active layer over the thick InGaN layer, the active layer comprising at least one quantum well.

22. The method according to claim 21, wherein the nucleation layer includes a plurality of nucleation layers.

23. The method according to claim 21, further comprising the step of forming at least one group III-V nitride layer over the active layer.

24. The method according to claim 21, wherein the active layer includes a waveguiding layer and a quantum well active region.

25. The method according to claim 21, wherein the active layer comprises InGaN.

26. The method according to claim 21, wherein the thick InGaN layer is n-type doped.

27. The method according to claim 21, wherein the semiconductor structure is an optoelectronic device.

28. The method according to claim 21, wherein the semiconductor structure emits light in the blue region of the spectrum.

29. The method according to claim 21, wherein the semiconductor structure emits light with a wavelength within a range including 430 nm to 650 nm.

30. The method according to claim 23, wherein the thick InGaN layer and the at least one group III-V nitride layer form confinement layers, confining injected carriers to the active layer.

31. The method according to claim 21, wherein the active layer comprises a plurality of quantum wells.

32. The method according to claim 31, wherein the quantum wells each have a thickness of about 10 Å

.

35. A laser diode, comprising:

a nucleation layer;

a thick InGaN layer grown directly on the nucleation layer; and

an active layer formed over the thick InGaN layer, the active layer including an InGaN quantum well active region.

36. The laser diode according to claim 35, wherein the active layer comprises:

a first group III-V nitride cladding layer on the thick InGaN layer;

the InGaN quantum well active region formed over the first group III-V nitride cladding layer; and

a second group III-V nitride cladding layer over the InGaN quantum well active region.

37. The laser diode according to claim 36, wherein the laser diode emits light with a wavelength within a range of from 430 nm to 650 nm.