Apparatus and method for forming thin film

• US 6,235,112 B1
• Filed: 01/26/1999
• Issued: 05/22/2001
• Est. Priority Date: 01/26/1998
• Status: Expired due to Term

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Satoh, Kiyoshi
• Primary Examiner(s): Crispino, Richard
• Assistant Examiner(s): LORENGO, JERRY A
• Application Number:
  US09/238,015
• Time in Patent Office: 847 Days
• Field of Search: 118/300, 118/306, 118/730, 118/725, 118/726, 118/313, 118/326, 427/248.1, 427/311, 427/314, 427/585, 427/99, 427/124, 117/88, 117/100, 117/102, 117/109, 438/680
• US Class Current: 118/300
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/4486 by producing an aerosol and subsequent evaporation of the droplets or particles

Abstract

An apparatus for forming a thin film such as a silicon oxide film on a surface of a substrate such as a semiconductor substrate includes: a reaction chamber having an interior where the substrate is placed when in use; a liquid reaction material supplier for supplying a given amount of liquid reaction material such as TEOS for forming a thin film on the substrate; and a mist-forming device for forming mist of the liquid reaction material and spraying the liquid reaction material onto a surface of the substrate for forming a thin film thereon. The mist-forming device is disposed upstream of the reaction chamber and downstream of the liquid reaction material supplier. Neither of the mist-forming device nor the liquid reaction material supplier includes a heating device for heating the liquid reaction material.

Claims

1. An apparatus for forming a thin film on a surface of a substrate, comprising:

a reaction chamber having an interior where the substrate is placed when in use;

a liquid reaction material supplier for supplying a given amount of liquid reaction material for forming a thin film on the substrate;

a mist-forming device having a nozzle for forming mist of the liquid reaction material onto a surface of the substrate for forming a thin film thereon, said mist-forming device being disposed upstream of the reaction chamber and downstream of the liquid reaction material supplier, said nozzle being exposed to the interior of the reaction chamber right above the center of the substrate;

an electrode disposed around the nozzle wherein the nozzle is insulated from the electrode; and

a purge gas-supplying device for supplying purge gas at a given flow rate for expelling unused liquid reaction material from the mist-forming device, said purge gas-supplying device being disposed upstream of the mist-forming device and connected thereto.

2. The apparatus according to claim 1, wherein the liquid reaction material supplier comprises a container for accommodating the liquid reaction material and a flow controller for controlling the liquid flow of the liquid reaction material supplied from the container to the mist-forming device.

3. The apparatus according to claim 1, wherein the mist-forming device comprises an ultrasonic wave vibrator for forming mist of the liquid reaction material, and an ultrasonic wave generator connected to the ultrasonic wave vibrator.

4. The apparatus according to claim 1, further comprising a temperature controller for maintaining the substrate at an appropriate temperature for forming a thin film thereon.

5. The apparatus according to claim 1, further comprising a reaction material gas-supplying device for supplying a reaction material gas at a given flow rate, said reaction material gas-supplying device being connected to the interior of the reaction chamber, said reaction material gas being reactive with the liquid reaction material to form a thin film on the surface of the substrate.

6. The apparatus according to claim 1, further comprising a cleaning gas-supplying device for supplying cleaning gas at a given flow rate for removing unwanted products formed in the interior of the reaction chamber upon formation of a thin film on the substrate, said cleaning gas-supplying device being connected to the interior of the reaction chamber.

7. The apparatus according to claim 1, further comprising a device for generating a radio-frequency discharge area in the interior of the reaction chamber to form a thin film on the substrate where the mist of the liquid reaction material is sprayed.

8. The apparatus according to claim 1, wherein neither of the mist-forming device nor the liquid reaction material supplier comprises a heating device for heating the liquid reaction material.

9. The apparatus according to claim 1, which is a plasma CVD apparatus or a thermal CVD apparatus.

10. An apparatus for forming a thin film on a surface of a substrate, comprising:

a reaction chamber having an interior where the substrate is placed when in use;

a liquid reaction material supplier for supplying a liquid reaction material for forming a thin film on the substrate;

a mist-forming device for forming mist of the liquid reaction material onto a surface of the substrate for forming a thin film thereon, said mist-forming device being disposed on top of the reaction chamber and downstream of the liquid reaction material supplier;

a flow controller for controlling a flow rate of the liquid reaction material, said flow controller being disposed between the liquid reaction material supplier and the mist-forming device;

a diluent solvent-supplier for controlling the viscosity of the liquid reaction material by adding a diluent solvent at a given rate to the liquid reaction material between the flow controller and the mist-forming device; and

a purge gas-supplying device for supplying purge gas at a given flow rate for expelling unused liquid reaction material from the mist-forming device, said purge gas-supplying device being disposed upstream of the mist-forming device and connected thereto.

11. The apparatus according to claim 10, further comprising an electrode disposed around the mist-forming device.