System for wafer cleaning
First Claim
1. A system for performing an HF vapor cleaning process, comprising:
- a single vapor chamber for positioning a wafer having a wafer surface;
a carrier gas source for providing an inert carrier gas;
a vapor source operable using the inert carrier gas for providing one of a water vapor or an alcohol vapor to the single vapor chamber;
a hydrofluoric acid (HF) source for providing a hydrofluoric acid component to the single vapor chamber;
an etch reducing component source for providing an etch reducing component to the single vapor chamber; and
wherein the single vapor chamber provides an HF vapor for cleaning the wafer surface, the HF vapor including a combination of;
the hydrofluoric acid (HF) component;
the one of a water vapor or an alcohol vapor; and
the etch reducing component, wherein the etch reducing component is from the group of (R)4NOH wherein R═
(C1-C20)alkyls, either straight or branch chained, and further wherein each R is independently a (C1-C20)alkyl.
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Accused Products
Abstract
A method of cleaning wafer surfaces includes providing a wafer surface and cleaning the wafer surface using at least hydrofluoric acid (HF) and an etch reducing component. The etch reducing component is from the group of (R)4NOH wherein R═(C1-C20)alkyls, either straight or branch chained, and further wherein each R is independently a (C1-C20)alkyl, preferably a (C1-C4)alkyl, and more preferably one of tetra ethyl ammonium hydroxide (TEAH) and tetra methyl ammonium hydroxide (TMAH). A cleaning solution for use in cleaning a wafer surface includes an H2O diluted HF solution and an etch reducing component from the group above, preferably, TMAH. A system for performing an HF vapor cleaning process includes a vapor chamber for positioning a wafer having a wafer surface and means for providing an HF vapor to the vapor chamber. The HF vapor includes an inert carrier gas, an HF component, one of a water vapor or an alcohol vapor, and an etch reducing component. The etch reducing component may be from the group above, preferably, TMAH.
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Citations
6 Claims
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1. A system for performing an HF vapor cleaning process, comprising:
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a single vapor chamber for positioning a wafer having a wafer surface;
a carrier gas source for providing an inert carrier gas;
a vapor source operable using the inert carrier gas for providing one of a water vapor or an alcohol vapor to the single vapor chamber;
a hydrofluoric acid (HF) source for providing a hydrofluoric acid component to the single vapor chamber;
an etch reducing component source for providing an etch reducing component to the single vapor chamber; and
wherein the single vapor chamber provides an HF vapor for cleaning the wafer surface, the HF vapor including a combination of;
the hydrofluoric acid (HF) component;
the one of a water vapor or an alcohol vapor; and
the etch reducing component, wherein the etch reducing component is from the group of (R)4NOH wherein R═
(C1-C20)alkyls, either straight or branch chained, and further wherein each R is independently a (C1-C20)alkyl.- View Dependent Claims (2, 3, 4, 5, 6)
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Specification