Method of fabricating nitride semiconductor laser
First Claim
1. A method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate, the method comprising the steps of:
- forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦
x≦
1, 0≦
y≦
1) having an added group II element over the substrate;
heating said crystal layer up to a temperature in a thermal treatment atmosphere and maintaining said temperature for a first time period; and
introducing a hydrocarbon gas into said thermal treatment atmosphere for at least a partial time period within said first time period.
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Abstract
The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦x≦1, 0≦y≦1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.
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12 Claims
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1. A method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate, the method comprising the steps of:
-
forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦
x≦
1, 0≦
y≦
1) having an added group II element over the substrate;
heating said crystal layer up to a temperature in a thermal treatment atmosphere and maintaining said temperature for a first time period; and
introducing a hydrocarbon gas into said thermal treatment atmosphere for at least a partial time period within said first time period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification