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Method for manufacturing stacked capacitor

  • US 6,235,579 B1
  • Filed: 11/30/1999
  • Issued: 05/22/2001
  • Est. Priority Date: 10/18/1999
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a stacked capacitor, comprising the steps of:

  • proving a substrate;

    forming a first dielectric layer over the substrate;

    forming a first nitride layer on the first dielectric layer;

    forming a storage node contact hole penetrating through the first nitride layer and the first dielectric layer to expose a portion of the substrate;

    forming a first conductive plug in the storage node contact hole;

    forming a second dielectric layer on the first nitride layer and the first conductive plug;

    forming a second nitride layer on the second dielectric layer;

    forming a contact hole penetrating through the second nitride layer and the second dielectric layer to expose a portion of the first conductive plug;

    forming a second conductive plug in the contact hole with a surface level lower than a surface level of the second nitride layer;

    forming a metal barrier layer on the second conductive plug and filling the contact hole;

    forming a first metal layer over the substrate;

    patterning the first metal layer, the second nitride layer and the second dielectric layer to form a storage node, wherein the storage node comprises the second conductive plug and the metal barrier layer;

    forming a metal spacer on the sidewall of the storage node;

    forming a third dielectric layer over the substrate; and

    forming a second metal layer on the third dielectric layer.

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