Semiconductor device including insulation film and fabrication method thereof

• US 6,235,648 B1
• Filed: 09/25/1998
• Issued: 05/22/2001
• Est. Priority Date: 09/26/1997
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Watanabe, Hiroyuki, Mizuhara, Hideki, Matsubara, Naoteru
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): BERRY, RENEE R
• Application Number:
  US09/160,044
• Time in Patent Office: 970 Days
• Field of Search: 438/783, 438/618, 438/637, 438/653, 438/669, 438/766, 438/720, 438/301, 438/305, 438/586, 438/595, 438/981, 257/324, 257/340, 257/389
• US Class Current: 438/783
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02321 introduction of substances into an already existing insulating layer H01L21/02227 and subgroups take precedence
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31155 by ion implantation
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76859 by ion implantation

Abstract

A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.

Claims

1. A fabrication method of a semiconductor device comprising the steps of:

forming a first insulation film on a substrate,

forming a cap film on said first insulation film having a water resistance better than the water resistance of said first insulation film, and

introducing impurities into said first insulation film,

wherein said introduction of impurities into said first insulation film is carried out through said cap film after said cap film is formed.

2. The fabrication method of a semiconductor device according to claim 1, further comprising the step of forming a lower insulation film on the substrate prior to formation of said first insulation film,

wherein said introduction of impurities into said first insulation film is carried out under a condition where introduced impurities arrive at an interface between said first insulation film and said lower insulation film.

3. The fabrication method of a semiconductor device according to claim 1, further comprising the step of forming a metal interconnection layer on the substrate, prior to formation of said first insulation film, wherein said introduction of impurities into said first insulation film is carried out under a condition where introduced impurities arrive at said metal interconnection layer.

4. The fabrication method of a semiconductor device according to claim 1, further comprising the step of forming a metal interconnection layer on the substrate, and forming a lower insulation film on the metal interconnection layer, prior to formation of said first insulation film,

wherein said introduction of impurities into said first insulation film is carried out under a condition where introduced impurities arrive at said metal interconnection layer.

5. The fabrication method of a semiconductor device according to claim 1, wherein said first insulation film comprises a silicon oxide film containing at least 1% of carbon atoms.

6. The fabrication method of a semiconductor device according to claim 1, wherein said first insulation film comprises an inorganic SOG film.

7. The fabrication method of a semiconductor device according to claim 1, wherein said cap film comprises a silicon nitride type material.

8. The fabrication method of a semiconductor device according to claim 1, wherein said cap film is formed by applying a plasma process on a surface layer of said first insulation film in an atmosphere of nitrogen or nitrogen compound.

9. The fabrication method of a semiconductor device according to claim 1, wherein said cap film comprises a silicon oxide film formed by plasma CVD.

10. The fabrication method of a semiconductor device according to claim 1, wherein said cap film comprises a metal film.

11. The fabrication method of a semiconductor device according to claim 1, wherein said impurities are one of boron ions and argon ions.

12. The fabrication method of a semiconductor device according to claim 2, wherein said introduction of impurities into said first insulation film is carried out under a condition where the number of impurities per unit area passing through a bottom plane of said first insulation film is at least 2×

10¹³ atoms/cm².

13. The fabrication method of a semiconductor device according to claim 2, wherein said introduction of impurities into said first insulation film is carried out under a condition where the number of impurities per unit area passing through a bottom plane of said first insulation film is 2×

10¹⁸ atoms/cm².

14. The fabrication method of a semiconductor device according to claim 1, wherein said impurities are introduced by ion implantation.

15. The fabrication method of a semiconductor device according to claim 1, comprising the step of carrying out heat treatment after said introduction of impurities.