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Semiconductor device including insulation film and fabrication method thereof

  • US 6,235,648 B1
  • Filed: 09/25/1998
  • Issued: 05/22/2001
  • Est. Priority Date: 09/26/1997
  • Status: Expired due to Term
First Claim
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1. A fabrication method of a semiconductor device comprising the steps of:

  • forming a first insulation film on a substrate, forming a cap film on said first insulation film having a water resistance better than the water resistance of said first insulation film, and introducing impurities into said first insulation film, wherein said introduction of impurities into said first insulation film is carried out through said cap film after said cap film is formed.

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