Semiconductor manufacturing system and semiconductor manufacturing method

• US 6,235,655 B1
• Filed: 11/24/1999
• Issued: 05/22/2001
• Est. Priority Date: 11/26/1998
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Jozaki, Tomohide
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Rocchegiani, Renzo
• Application Number:
  US09/448,590
• Time in Patent Office: 545 Days
• Field of Search: 427/570, 427/560, 118/723, 216/68, 156/345, 438/795
• US Class Current: 438/795
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings

Abstract

A problem in the manufacture of semiconductor wafers exists in that reaction product adhering to a quartz member is peeled off and falls on wafers, thus causing particles to contaminate the wafers. In system of introducing electro-magnetic waves from the outside via the quartz member, an inventive high-density plasma etching system for processing wafers by introducing electro-magnetic waves generated by a TCP electrode into a vacuum chamber via a quartz top board and by generating plasma by exciting gas within the chamber comprises a far infrared ray heater disposed above the quartz top board to heat the quartz top board by radiant heat of infrared rays generated from the far infrared ray heater, reducing the product adhering to the quartz member and thus the contaminating particles, thereby improving the yield of the wafers.

Claims

1. A semiconductor manufacturing method, comprising the steps of:

introducing a wafer into a vacuum chamber;

introducing gas into said vacuum chamber;

introducing electro-magnetic waves to said vacuum chamber via a quartz member to generate plasma by exciting the gas within said vacuum chamber; and

heating said quartz member to remove reaction product adhering to said quartz member while said electro-magnetic waves are introduced into said vacuum chamber.

2. The semiconductor manufacturing method according to claim 1, wherein said quartz member is heated with a far infrared ray heater.

3. The semiconductor manufacturing method according to claim 2, further comprising the step of sand-blasting a surface of said quartz member.

4. The semiconductor manufacturing method according to claim 1, further comprising the steps of:

disposing a transparent conductive film of said heater only in a region of said quartz member where no electro-magnetic wave is transmitted; and

feeding power to said transparent conductive film.

5. The semiconductor manufacturing method according to claim 1, further comprising the step of disposing a heater only in a region of said quartz member through which no electro-magnetic wave is transmitted.