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Semiconductor crystallization on composite polymer substrates

  • US 6,236,061 B1
  • Filed: 01/08/1999
  • Issued: 05/22/2001
  • Est. Priority Date: 01/08/1999
  • Status: Expired due to Fees
First Claim
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1. A structure for a semiconductor device comprising:

  • a) a polymer substrate including a particulate filler for reducing the CTE of the polymer to less than 40 ppm/°

    C.;

    b) a first buffer layer disposed atop the substrate, said buffer layer having a thickness of less than 5 microns;

    c) at least one semiconductor layer disposed atop the first buffer layer, said semiconductor layer being at least partially laser annealed; and

    d) a second buffer layer disposed atop the at least one semiconductor layer said second buffer layer having a thickness of less than 2 microns.

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