Semiconductor crystallization on composite polymer substrates
First Claim
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1. A structure for a semiconductor device comprising:
- a) a polymer substrate including a particulate filler for reducing the CTE of the polymer to less than 40 ppm/°
C.;
b) a first buffer layer disposed atop the substrate, said buffer layer having a thickness of less than 5 microns;
c) at least one semiconductor layer disposed atop the first buffer layer, said semiconductor layer being at least partially laser annealed; and
d) a second buffer layer disposed atop the at least one semiconductor layer said second buffer layer having a thickness of less than 2 microns.
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Abstract
A structure and methodology for providing electronic devices comprised of semiconductor materials deposited and crystallized using a pulsed laser source on oxide and/or metal layers on polymeric and polymer composite substrates of low coefficient of thermal expansion (CTE). The present invention permits the fabrication of inexpensive yet highly efficient electronic devices, such as photovoltaic cells, on the filled substrates by the use of laser annealing techniques.
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17 Claims
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1. A structure for a semiconductor device comprising:
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a) a polymer substrate including a particulate filler for reducing the CTE of the polymer to less than 40 ppm/°
C.;
b) a first buffer layer disposed atop the substrate, said buffer layer having a thickness of less than 5 microns;
c) at least one semiconductor layer disposed atop the first buffer layer, said semiconductor layer being at least partially laser annealed; and
d) a second buffer layer disposed atop the at least one semiconductor layer said second buffer layer having a thickness of less than 2 microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure for a photovoltaic device comprising:
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a) a polymer substrate including a particulate filler for reducing the CTE of the polymer to less than 30 ppm/°
C.;
b) a first electrode disposed atop the substrate;
c) at least one semiconductor layer of a first polarity type deposited atop the first electrode, d) at least one semiconductor layer of a second polarity type deposited atop the first semiconductor layer, e) at least one of said semiconductor layers being at least partially laser annealed after deposition; and
f) a second electrode disposed atop the second semiconductor layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification