Electro-optical device
First Claim
1. An active matrix device having at least one switching element operationally connected to a pixel electrode, said switching element comprising a plurality of inverse staggered thin film transistors of a same conductivity type connected in series with respect to a signal line, wherein each of said thin film transistors has a channel region comprising crystalline silicon and said thin film transistors are n-channel type having an electron mobility of 15-300 cm2/Vsec.
0 Assignments
0 Petitions
Accused Products
Abstract
A liquid-crystal electro-optical device capable of compensating for the operation of any malfunctioning one of TFTs (thin-film transistors) existing within the device if such a malfunction occurs. Plural complementary TFT configurations are provided per pixel electrode. Each complementary TFT configuration consists of at least one p-channel TFT and at least one n-channel TFT. The input and output terminals of the plural complementary TFT configurations are connected in series. One of the input and output terminals is connected to the pixel electrode, while the other is connected to a first signal line. All the gate electrodes of the p-channel and n-channel TFTs included in said plural complementary TFT configurations are connected to a second signal line.
139 Citations
70 Claims
- 1. An active matrix device having at least one switching element operationally connected to a pixel electrode, said switching element comprising a plurality of inverse staggered thin film transistors of a same conductivity type connected in series with respect to a signal line, wherein each of said thin film transistors has a channel region comprising crystalline silicon and said thin film transistors are n-channel type having an electron mobility of 15-300 cm2/Vsec.
-
6. An active matrix device having at least one switching element operationally connected to a pixel electrode, said switching element comprising:
-
a signal line formed over a substrate;
at least two inverse staggered type thin film transistors having a same channel type formed over said substrate, and connected to said signal line in series, each of said thin film transistors having a gate electrode, a gate insulating film formed on said gate electrode and a channel region over said gate electrode, wherein the respective channel regions of said two inverse staggered type thin film transistors are formed in a common semiconductor island comprising crystalline silicon and said thin film transistors are n-channel type having an electron mobility of 15-300 cm2/Vsec. - View Dependent Claims (7, 8, 9, 10)
-
-
11. An active matrix device having at least one switching element operationally connected to a pixel electrode, said switching element comprising:
-
a semiconductor island comprising crystalline silicon formed over a substrate;
a plurality of gate electrodes adjacent to said island, said gate electrodes being electrically connected with one another;
a gate insulating layer interposed between said gate electrodes and said semiconductor island;
a plurality of channel regions formed in said semiconductor island adjacent to said gate electrodes; and
a plurality of impurity regions formed in said semiconductor island and contiguous to said channel regions, said impurity regions having P-type conductivity;
wherein a Hall mobility in one of said channel regions is 10-200 cm2/Vsec. - View Dependent Claims (12, 13, 14, 15)
-
-
16. An active matrix device having at least one switching element operationally connected to a pixel electrode, said switching element comprising:
-
a semiconductor island comprising crystalline silicon formed over a substrate;
a plurality of gate electrodes adjacent of said island, said gate electrodes being electrically connected with one another;
a gate insulating layer interposed between said gate electrodes and said semiconductor island;
a plurality of channel regions formed in said semiconductor island adjacent to said gate electrodes; and
a plurality of impurity regions formed in said semiconductor island and contiguous to said channel regions, said impurity regions having a same impurity conductivity type with one another;
wherein said channel regions contains boron at a concentration of 1×
1014 to 1×
1017 atoms/cm3.- View Dependent Claims (17, 18, 19, 20, 21)
-
- 22. An active matrix device having at least one switching element having at least two inverse staggered thin film transistors of a same channel type, each of said thin film transistors comprising a gate electrode, a gate insulating film formed over said gate electrode, and a channel region formed over said gate electrode with said gate insulating film interposed therebetween, wherein the respective channel regions of said at least two inverse staggered thin film transistors are formed in a common semiconductor island comprising crystalline silicon, and said thin film transistors are n-channel type having an electron mobility of 15-300 cm2/Vsec.
-
26. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
at least first and second N-channel thin film transistors electrically connected between said pixel electrode and said second signal line in series, each thin film transistor comprising a gate electrode, source and drain regions, a channel forming region, and a gate insulating film between the gate electrode and the channel forming region, wherein said source, drain and channel forming regions are formed in a crystalline semiconductor layer, wherein each gate electrode of the first and second thin film transistors is commonly connected to said first signal line, one of source or drain of said first thin film transistor is connected to said second signal line, and one of source or drain of said second thin film transistor is connected to said pixel electrode, wherein each gate electrode of the first and second thin film transistors is located below each channel forming region of the first and second thin film transistors, and said thin film transistors have an electron mobility of 15-300 cm2/Vsec. - View Dependent Claims (27, 51, 53)
-
-
28. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
at least first and second N-channel thin film transistors electrically connected between said pixel electrode and said second signal line in series, each thin film transistor comprising a gate electrode, source and drain regions, a channel forming region, and a gate insulating film between the gate electrode and the channel forming region, wherein each gate electrode of the first and second thin film transistors is commonly connected to said first signal line, one of source or drain of said first thin film transistor is connected to said second signal line, and one of source or drain of said second thin film transistor is connected to said pixel electrode, wherein each gate electrode of the first and second thin film transistors is located below each channel forming region of the first and second thin film transistors, and wherein each channel forming region contains carbon, nitrogen or oxygen at a concentration not lower than 5×
1019 atoms/cm3.- View Dependent Claims (29)
-
-
30. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
at least first and second N-channel thin film transistors electrically connected between said pixel electrode and said second signal line in series, each thin film transistor comprising a gate electrode, source and drain regions, a channel forming region, and a gate insulating film between the gate electrode and the channel forming region, wherein each gate electrode of the first and second thin film transistors is commonly connected to said first signal line, one of source or drain of said first thin film transistor is connected to said second signal line, and one of source or drain of said second thin film transistor is connected to said pixel electrode, wherein each gate electrode of the first and second thin film transistors is located below each channel forming region of the first and second thin film transistors, wherein in measurement by laser Raman spectroscopy, that peaks of the channel forming region are shifted toward lower frequencies from the peak 522 cm−
1 of a single crystal silicon.- View Dependent Claims (31)
-
-
32. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
at least first and second P-channel thin film transistors electrically connected between said pixel electrode and said second signal line in series, each thin film transistor comprising a gate electrode, source and drain regions, a channel forming region, and a gate insulating film between the gate electrode and the channel forming region, wherein each gate electrode of the first and second thin film transistors is commonly connected to said first signal line, one of source or drain of said first thin film transistor is connected to said second signal line, and one of source or drain of said second thin film transistor is connected to said pixel electrode, wherein each gate electrode of the first and second thin film transistors is located below each channel forming region of the first and second thin film transistors, and wherein each channel forming region comprises crystalline silicon doped with boron. - View Dependent Claims (33)
-
-
34. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
at least first and second P-channel thin film transistors electrically connected between said pixel electrode and said second signal line in series, each thin film transistor comprising a gate electrode, source and drain regions, a channel formiing region, and a gate insulating film between the gate electrode and the channel forming region, wherein said source, drain and channel forming regions are formed in a crystalline semiconductor layer comprising silicon, wherein each gate electrode of the first and second thin film transistors is commonly connected to said first signal line, one of source or drain of said first thin film transistor is connected to said second signal line, and one of source or drain of said second thin film transistor is connected to said pixel electrode, wherein each gate electrode of the first and second thin film transistors is located below each channel forming region of the first and second thin film transistors, wherein in measurement by laser Raman spectroscopy, that peaks of the channel forming region are shifted toward lower frequencies from the peak 522 cm−
1 of a single crystal silicon and said first and second thin film transistors have a Hall mobility of 10-200 cm2/Vsec.
-
-
35. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
at least first and second N-channel thin film transistors electrically connected between said pixel electrode and said second signal line in series, each thin film transistor comprising a gate electrode, source and drain regions, a channel forming region, and a gate insulating film between the gate electrode and the channel forming region, wherein each gate electrode of the first and second thin film transistors is commonly connected to said first signal line, one of source or drain of said first thin film transistor is connected to said second signal line, and one of source or drain of said second thin film transistor is connected to said pixel electrode, wherein each gate electrode of the first and second thin film transistors is located below each channel forming region of the first and second thin film transistors, and wherein each channel forming region comprises crystalline silicon doped with boron. - View Dependent Claims (36)
-
-
37. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said second signal line;
at least two gate electrodes disposed below said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line.
-
-
38. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes disposed below said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line, wherein said at least two channel forming regions contain boron.
-
-
39. An electro-optical device comprising:
-
a semiconductor island comprising crystalline silicon formed over a substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein at least two gate electrodes disposed below said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line, wherein said semiconductor island has an electron mobility from 15 to 300 cm2/Vsec.
-
-
40. An electro-optical device comprising:
-
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions having a P-type conductivity;
at least two gate electrodes disposed adjacent to said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to each other, wherein said semiconductor island has a hole mobility from 10 to 200 cm2/Vsec.
-
-
41. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes below said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line, wherein said pixel electrode is light reflective.
-
-
42. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes disposed adjacent to said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line; and
a twisted nematic liquid crystal adjacent to said pixel electrode, wherein a concentration of boron in said forming channel regions is 1×
1014 to 1×
1017 atoms/cm3 and a concentration of carbon oxygn or nitrogen in said channel forming regions is not lower than 5×
1019 atoms/cm3.
-
-
43. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes disposed adjacent to said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line; and
a ferroelectric liquid crystal adjacent to said pixel electrode, wherein a concentration of boron in said forming channel regions is 1×
1014 to 1×
1017 atoms/cm3 and a concentration of one of carbon, oxygen and nitrogen in said channel forming regions is not lower than 5×
1019 atoms/cm3.
-
-
44. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes disposed adjacent to said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line; and
a dispersion or polymeric liquid crystal adjacent to said pixel electrode, wherein a concentration of boron in said forming channel regions is 1×
1014 to 1×
1017 atoms/cm3 and a concentration of one of carbon oxygen and nitrogen in said channel forming regions is not lower than 5×
1019 atoms/cm3.
-
-
45. An electro-optical device comprising:
-
a substrate having an insulating surface;
a first signal line formed over said substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed on said insulating surface, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
an insulating film comprising silicon oxide formed on said semiconductor island wherein said second insulating film extends beyond side edges of said semiconductor island so that said first insulating surface is directly covered by said insulating film; and
at least two gate electrodes disposed adjacent to said at least two channel forming regions wherein said two gate electrodes are commonly connected to said first signal line, wherein a concentration of one of carbon oxygen and nitrogen in said channel forming regions is not lower than 5×
1019 atoms/cm3.
-
-
46. An electro-optical device comprising:
-
a semiconductor island comprising crystalline silicon formed over a substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein at least two gate electrodes disposed over said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to each other, wherein said channel forming regions contain boron in a concentration of 1×
1014 to 1×
1017 atoms/cm3.
-
-
47. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes disposed over said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line, wherein said at least two channel forming regions contain boron in a concentration of 1×
1014 to 1×
1017 atoms/cm3.
-
-
48. An electro-optical device comprising:
-
a first signal line formed over a substrate;
a second signal line extending in an orthogonal direction to said first signal line over said substrate;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
at least two gate electrodes disposed over said at least two channel forming regions with a gate insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line, wherein said pixel electrode is light reflective and said channel forming regions have a Hall mobility of 10-200 cm2/Vsec.
-
-
49. An electro-optical device comprising:
-
a first insulating film comprising silicon oxide over a substrate;
a first signal line formed over said first insulating film;
a second signal line extending in an orthogonal direction to said first signal line over said first insulating film;
a pixel electrode disposed at an intersection between said first signal line and said second signal line; and
a semiconductor island comprising crystalline silicon formed on said first insulating film, said semiconductor island having at least two channel forming regions and source and drain regions therein wherein one of said source and drain regions is connected to said pixel electrode while the other one of said source and drain regions is connected to said second signal line so that said two channel forming regions are electrically connected between said second signal line and said pixel electrode in series;
a second insulating film comprising silicon oxide formed on said semiconductor island wherein said second insulating film extends beyond side edges of said semiconductor island so that said first insulating film directly covered by said second insulating film; and
at least two gate electrodes disposed over said at least two channel forming regions with said second insulating film interposed therebetween wherein said two gate electrodes are commonly connected to said first signal line.
-
-
54. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one switching element provided over said substrate for switching one of said pixels, said switching element comprising at least first and second thin film transistors of a same conductivity type connected in series; and
a plurality of pixel electrodes provided at said plurality of pixels. - View Dependent Claims (57, 58, 59, 60)
-
-
55. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one switching element provided over said substrate for switching one of said pixels, said switching element comprising at least first and second inverse staggered thin film transistors of a same conductivity type connected in series; and
a plurality of pixel electrodes provided at said plurality of pixels.
-
-
56. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one switching element provided over said substrate for switching one of said pixels, said switching element comprising at least first and second thin film transistors of a same conductivity type connected in series; and
a plurality of pixel electrodes provided at said plurality of pixels, wherein a gate electrode is located over a channel region in each of said first and second thin film transistors.
-
-
61. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one switching element for switching one of said pixels, wherein said switching element comprising;
a semiconductor island comprising crystalline silicon formed over said substrate;
at least first and second gate electrodes adjacent to said semiconductor island, said first and second gate electrodes being electrically connected with one another;
a gate insulating film interposed between said first and second gate electrodes and said semiconductor island;
at least first and second channel regions formed in said semiconductor island adjacent to said first and second gate electrodes;
at least source and drain regions formed in said semiconductor island, a plurality of pixel electrodes provided at said plurality of pixels. - View Dependent Claims (63)
-
-
62. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one switching element for switching one of said pixels, wherein said switching element comprising;
a semiconductor island comprising crystalline silicon formed over said substrate;
at least first and second gate electrodes disposed over said semiconductor island, said first and second gate electrodes being electrically connected with one another;
a gate insulating film interposed between said first and second gate electrodes and said semiconductor island;
at least first and second channel regions formed in said semiconductor island adjacent to said first and second gate electrodes; and
at least source and drain regions formed in said semiconductor island, a plurality of pixel electrodes provided at said plurality of pixels.
-
-
64. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one first signal line extending in one direction over a substrate;
at least one second signal line extending across said first signal line;
at least first and second inverse staggered thin film transistors of a same conductivity type provided in one of said pixels, wherein said first and second thin film transistors are electrically connected to said first signal line in series and gate electrodes of said first and second thin film transistors are connected to said second signal line; and
a plurality of pixel electrodes provided at said plurality of pixels. - View Dependent Claims (66, 67, 68)
-
-
65. An active matrix type electroluminescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one first signal line extending in one direction over a substrate;
at least one second signal line extending across said first signal line;
at least first and second thin film transistors of a same conductivity type provided in one of said pixels, each of said first and second thin film transistors having a gate electrode disposed over a channel region, wherein said first and second thin film transistors are electrically connected to said first signal line in series and gate electrodes of said first and second thin film transistors are connected to said second signal line; and
a plurality of pixel electrodes provided at said plurality of pixels.
-
-
69. An active matrix type electrolurninescent display device having a plurality of pixels, comprising:
-
a substrate;
at least one first signal line extending in one direction over a substrate;
at least one second signal line extending across said first signal line;
at least first and second thin film transistors of a same conductivity type provided in one of said pixels, wherein said first and second thin film transistors are electrically connected to said first signal line in series and gate electrodes of said first and second thin film transistors are connected to said second signal line; and
a plurality of pixel electrodes provided at said plurality of pixels, wherein channel regions of said first and second thin film transistors are formed in a common semiconductor island formed over said substrate. - View Dependent Claims (70)
-
Specification