Temperature compensated microelectromechanical structures and related methods

• US 6,236,139 B1
• Filed: 02/26/1999
• Issued: 05/22/2001
• Est. Priority Date: 02/26/1999
• Status: Expired due to Fees

• Current Assignee: Memscap Incorporated
• Original Assignee: Viavi Solutions, Inc. (Lumentum Holdings Inc.)
• Inventors: Wood, Robert L., Mahadevan, Ramaswamy, Hill, Edward
• Primary Examiner(s): Dougherty, Thomas M.
• Application Number:
  US09/261,483
• Time in Patent Office: 816 Days
• Field of Search: 310/306, 310/307
• US Class Current: 310/307
• CPC Class Codes: B81B 3/0024 Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators electric motors using thermal effects H02N10/00
• CPC Class Codes: B81B 3/0081 Thermal properties
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 2001/0042 Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
• CPC Class Codes: H02N 10/00 Electric motors using thermal effects motors using expansion or contraction of bodies due to heating or cooling F03G7/06

Abstract

MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element, such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. In an alternative embodiment wherein the active microactuator is suspended within a frame above the substrate, the MEMS structure holds at least a portion of the active microactuator in a fixed position relative to the substrate over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. By actively altering the temperature of the active microactuator, the active microactuator can be controllably moved relative to the temperature compensation microactuator and/or the underlying substrate. Related methods of compensating for the effects of ambient temperature variations are provided. Further, an overplating technique is provided for precisely sizing a gap defined within a MEMS structure.

Claims

1. A temperature compensated microelectromechanical structure, comprising:

a microelectronic substrate having a first major surface;

a temperature compensation microactuator, disposed upon the first major surface of said microelectronic substrate and configured to move a first distance in a direction in response to a change in ambient temperature; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate that is configured to move the first distance in the same direction to maintain a spacing between the temperature compensation microactuator and the active microactuator in response to the change in ambient temperature and that is configured to move a second distance in the same direction to reduce the spacing in response to active alteration of the temperature of said active microactuator.

2. A temperature compensated microelectromechanical structure according to claim 1, wherein said temperature compensation microactuator is adapted to move within a plane generally parallel to the first major surface of the microelectronic substrate in response to changes in ambient temperature, and wherein said active microactuator is adapted to move within a plane generally parallel to the first major surface of said microelectronic substrate in response to changes in ambient temperature and active alteration of the temperature of said active microactuator.

3. A temperature compensated microelectromechanical structure according to claim 1, wherein said temperature compensation microactuator comprises a first member adapted to move in response to changes in ambient temperature, wherein said active microactuator comprises a second member adapted to move in response to changes in ambient temperature and active alteration of the temperature of said active microactuator, wherein said first member and said second member are selectively brought into contact with each other in response to alteration of the temperature of said microactuators.

4. A temperature compensated microelectromechanical structure according to claim 3, wherein at least one of said temperature compensation microactuator and said active microactuator further comprises a spring, said spring adapted to flex and absorb mechanical stresses as said first member and said second member are selectively brought into contact with each other.

5. A temperature compensated microelectromechanical structure according to claim 1, wherein said temperature compensation microactuator comprises a thermal arched beam actuator, said thermal arched beam actuator further comprising at least two anchors affixed to the first major surface of the microelectronic substrate, at least one arched beam disposed between said at least two anchors, wherein said at least one thermal arched beam is adapted to arch further in response to changes in ambient temperature.

6. A temperature compensated microelectromechanical structure according to claim 1, wherein said active microactuator comprises a thermal arched beam actuator, said thermal arched beam actuator further comprising at least two anchors affixed to the first major surface of the microelectronic substrate, at least one arched beam disposed between said at least two anchors, wherein said at least one thermal arched beam is adapted to arch further in response to the cumulative effect of changes in ambient temperature and active alteration of the temperature of said active microactuator.

7. A temperature compensated microelectromechanical structure according to claim 1, wherein said active microactuator and said temperature compensation microactuator each comprise a thermal arched be am actuator, said each thermal arched beam actuator further comprising at least two anchors affixed to the first major surface of the microelectronic substrate, at least one arched beam disposed between said at least two anchors, wherein each arched beam is adapted to arch further in response to changes in temperature, and wherein said temperature compensation microactuator comprises a larger number of arched beams than said active microactuator.

8. A temperature compensated microelectromechanical structure according to claim 7, wherein said active microactuator further comprises a heater adapted to selectively alter the temperature o f said active microactuator so as to controllably move said active microactuator.

9. A temperature compensated microelectromechanical structure according to claim 8, wherein one of said temperature compensation microactuator and said active microactuator further comprises a male electrical contact adapted to move with said microactuator, wherein the other of said temperature compensation microactuator and said active microactuator further comprises a complimentary female electrical contact adapted to move with said microactuator, and wherein said male electrical contact and said complimentary female electrical contact are selectively brought into contact with each other in response to alteration of the temperature of said microactuators.

10. A temperature compensated microelectromechanical structure according to claim 1, wherein said temperature compensation microactuator further comprises a first electrically conductive surface, wherein said active microactuator further comprises a complimentary second electrically conductive surface, wherein the predefined spatial relationship between said temperature compensation microactuator and said active microactuator establishes electrical capacitance between said first and said second electrically conductive surfaces, the electrical capacitance substantially maintained over a range of ambient temperatures in the absence of active alteration of the temperature of said microactuators.

11. A temperature compensated microelectromechanical structure according to claim 10, wherein said active microactuator moves in response to active alteration of the temperature thereof to controllably vary the electrical capacitance.

12. A temperature compensated microelectromechanical structure according to claim 1, wherein said temperature compensation microactuator further comprises a first electrically conductive surface, wherein said active microactuator further comprises a complementary second electrically conductive surface electrically connected to said first electrically conductive surface, wherein the predefined spacing between said temperature compensation microactuator and said active actuator establishes an electrical resistance between said temperature compensated microactuator and said active microactuator, said electrical resistance substantially maintained over a range of ambient temperatures in the absence of active alteration of the temperature of said microactuators.

13. A temperature compensated microelectromechanical structure according to claim 12, wherein said active microactuator moves in response to active alteration of the temperature thereof to controllably vary the electrical resistance.

14. A temperature compensated microelectromechanical structure according to claim 1, wherein said temperature compensation microactuator further comprises a valve plate that defines a passage therethrough, and wherein said active microactuator is adapted to selectively block at least a portion of said passage in response to active alteration of the temperature thereof.

15. A temperature compensated microelectromechanical structure according to claim 1, wherein said active microactuator further comprises a mirror adapted for movement with said active microactuator, wherein the position of said mirror relative to said microelectronic substrate is substantially maintained over a range of ambient temperatures in the absence of active alteration of the temperature of said active microactuator, and wherein the position of said mirror is modified in response to active alteration of the temperature of said active microactuator.

16. A temperature compensated microelectromechanical structure according to claim 1, wherein said active microactuator further comprises an attenuator of electromagnetic radiation, said attenuator adapted for movement with said active microactuator so as to selectively block electromagnetic radiation traveling along at least one path, wherein the relative positions of said attenuator and the path of electromagnetic radiation are substantially maintained over a range of ambient temperatures in the absence of active alteration of the temperature of said microactuators, and wherein the relative positions are modified in response to active alteration the temperature of said microactuators.

17. A temperature compensated microelectromechanical structure, comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in response to a change in ambient temperature; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move relative to said frame to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature.

18. A temperature compensated microelectromechanical structure according to claim 17, wherein said frame further comprises at least one anchor affixed to the first major surface of the microelectronic substrate.

22. A temperature compensated microelectromechanical structure according to claim 17, further comprising a first electrically conductive surface disposed upon said microelectronic substrate, wherein said active microactuator further comprises a complimentary second electrically conductive surface that is maintained in a predefined spatial relationship with said first electrically conductive surface to thereby establish electrical capacitance therebetween.

23. A temperature compensated microelectromechanical structure according to claim 22, wherein said active microactuator moves in response to active alteration of the temperature thereof to controllably vary the electrical capacitance.

24. A temperature compensated microelectromechanical structure according to claim 17, further comprising a first electrically conductive surface disposed upon said microelectronic substrate, wherein said active microactuator further comprises a complimentary second electrically conductive surface that is maintained in a predefined spatial relationship with said first electrically conductive surface to thereby establish an electrical resistance therebetween.

25. A temperature compensated microelectromechanical structure according to claim 24, wherein said active microactuator moves in response to active alteration of the temperature thereof to controllably vary the electrical resistance.

19. A temperature compensated microelectromechanical structure comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in a first direction in response to a change in ambient temperature, wherein said frame further comprises at least one anchor affixed to the first major surface of the microelectronic substrate; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move in a second direction that is different than the first direction to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature, wherein said frame has a generally concave shape adapted to receive and support said active microactuator, and wherein said active microactuator is disposed within said frame.

20. A temperature compensated microelectromechanical structure comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in a first direction in response to a change in ambient temperature, wherein said frame further comprises at least one anchor affixed to the first major surface of the microelectronic substrate; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move in a second direction that is different than the first direction to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature, wherein said active microactuator is disposed within said frame, and wherein said frame has a generally closed shape to substantially surround said active microactuator therein.

21. A temperature compensated microelectromechanical structure comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in a first direction in response to a change in ambient temperature; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move in a second direction that is different than the first direction to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature, further comprising at least two electrical contacts disposed upon said microelectronic substrate, said at least two electrical contacts being separated such that said at least two electrical contacts are electrically disconnected, wherein said active microactuator further comprises at least one shorting electrical contact, and wherein said active microactuator is controllably moved in response to active alteration of the temperature thereof, such that said at least one shorting electrical contact selectively electrically connects said at least two electrical contacts.

26. A temperature compensated microelectromechanical structure comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in a first direction in response to a change in ambient temperature; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move in a second direction that is different than the first direction to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature, the structure further comprising;

a valve member disposed upon said microelectronic substrate, wherein said valve member defines a passage therethrough, and wherein said active microactuator is adapted to selectively block at least a portion of said passage in response to active alteration of the temperature thereof.

27. A temperature compensated microelectromechanical structure comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in a first direction in response to a change in ambient temperature; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move in a second direction that is different than the first direction to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature, wherein said active microactuator further comprises a mirror adapted for movement with said microactuator, wherein the relative position of said mirror with respect to said microelectronic substrate is substantially maintained over a range of ambient temperatures in the absence of active alteration of the temperature of said microactuator, and wherein the relative position is modified in response to active alteration of the temperature of said active microactuator.

28. A temperature compensated microelectromechanical structure according to claim 27, further comprising a latch adapted to receive and selectively clamp said mirror in position.

29. A temperature compensated microelectromechanical structure comprising:

a microelectronic substrate having a first major surface;

a frame, disposed upon the first major surface of said microelectronic substrate and that is configured to move in a first direction in response to a change in ambient temperature; and

an active microactuator, disposed upon the first major surface of said microelectronic substrate, said active microactuator being operably connected to said frame and that is configured to move in a second direction that is different than the first direction to maintain a position of the active microactuator relative to the microelectronic substrate in response to the change in ambient temperature, wherein said active microactuator further comprises an attenuator of electromagnetic radiation, said attenuator adapted for movement with said active microactuator so as to selectively block electromagnetic radiation traveling along at least one path, wherein the relative position of said attenuator with respect to the path of electromagnetic radiation is substantially maintained over a range of ambient temperatures in the absence of active alteration of the temperature of said active microactuator, and wherein the relative positions are modified in response to active alteration the temperature of said microactuator.

30. A method of compensating for ambient temperature variations within a microelectromechanical structure comprising an active microactuator and a temperature compensation microactuator disposed upon a microelectronic substrate, wherein the method comprises the steps of:

permitting the temperature compensation microactuator to move a first distance in a direction in response to a change in ambient temperature; and

permitting the active microactuator to move the first distance in the same direction in response to the change in ambient temperature to maintain a spacing between the temperature compensation microactuator and the active microactuator and to move a second distance in the same direction in response to actively altering a temperature of the active microactuator.

31. A method of compensating for ambient temperature variations according to claim 30, further comprising the step of actively altering the temperature of the active microactuator in order to controllably alter the spacing between the temperature compensation microactuator and the active microactuator.

32. A method of compensating for ambient temperature variations according to claim 30, further comprising the step of actively altering the temperature of the active microactuator in order to controllably move the active microactuator such that the active microactuator and the temperature compensation microactuator selectively contact one another.

33. A method of compensating for ambient temperature variations within a microelectromechanical structure comprising an active microactuator coupled to a frame disposed upon a microelectronic substrate, wherein the method comprises the steps of:

permitting said frame to move in response to a change in ambient temperature; and

permitting said active microactuator to move relative to said frame in response to the change in ambient temperature to maintain a position of the active microactuator relative to the microelectronic substrate.

34. A method of compensating for ambient temperature variations according to claim 33, further comprising the step of actively altering the temperature of said active microactuator in order to controllably alter the position of at least a portion of said active microactuator with respect to said microelectronic substrate.