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Nonvolatile ferroelectric random access memory device and a method of reading data thereof

  • US 6,236,588 B1
  • Filed: 04/10/2000
  • Issued: 05/22/2001
  • Est. Priority Date: 07/28/1999
  • Status: Expired due to Term
First Claim
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1. A random access memory device comprising:

  • a top bit line;

    a top memory cell coupled to the top bit line;

    a bottom bit line corresponding to the top bit line;

    a sense amplifier coupled to the top and bottom bit lines, for sensing a voltage difference between the top and bottom bit lines; and

    a circuit for increasing a voltage of the top and bottom bit lines, before the sense amplifier is activated.

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