High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process

• US 6,238,588 B1
• Filed: 10/21/1996
• Issued: 05/29/2001
• Est. Priority Date: 06/27/1991
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Collins, Kenneth, Ding, Jian, Rice, Michael, Yin, Gerald, Groechel, David, Cui, Chunshi, Hung, Raymond
• Primary Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US08/733,554
• Time in Patent Office: 1,681 Days
• Field of Search: 216/67, 216/68, 216/79, 438/707, 438/710, 438/719, 438/723, 438/725, 204/192.32, 204/192.37
• US Class Current: 216/68
• CPC Class Codes: C23C 16/517 using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
• CPC Class Codes: H01F 2029/143 with control winding for generating magnetic bias
• CPC Class Codes: H01J 2237/3343 Problems associated with etching
• CPC Class Codes: H01J 2237/3345 anisotropy
• CPC Class Codes: H01J 2237/3346 Selectivity
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32467 Material
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32688 Multi-cusp fields
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01J 37/32871 Means for trapping or directing unwanted particles
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 10¹⁰ ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.

Claims

1. A method of performing an etch process on a semiconductor workpiece in a plasma reactor chamber, comprising:

providing a vacuum pump having a vacuum pump rate to evacuate the plasma reactor chamber;

supplying a polymer and etchant precursor gas containing at least carbon and fluorine into said chamber at a first flow rate sufficient of itself to maintain a gas pressure in said chamber in a low pressure range below about 20 mT;

establishing a high pressure range above 20 mT within said chamber for performing said etch process to define an etch structure comprising increasing said gas pressure in said chamber from said low pressure range to said high pressure range by adding a relatively non-reactive gas into said chamber at a second flow rate sufficient, in combination with the first flow rate of said precursor gas, to maintain said gas pressure in said high pressure range without requiring a decrease in the vacuum pump rate so as to increase polymer passivation strength without otherwise significantly increasing polymer precursor residence time;

continuously maintaining said gas pressure in said high pressure range during said etch process by continuously adding said relatively non-reactive gas into said chamber at said second flow rate; and

applying plasma source power into said chamber to form a high ion density plasma having an ion density in excess of 10¹⁰ ions per cubic centimeter.

2. The method of claim 1 wherein said high pressure range is in excess of 50 mT.

3. The method of claim 1 wherein said high pressure range is in excess of 100 mT.

4. The method of claim 1 wherein said ion density is in excess of 10¹¹ ions per cubic centimeter.

5. The method of claim 4 wherein said high pressure range is in excess of 50 mT.

6. The method of claim 4 wherein said high pressure range is in excess of 100 mT.

7. The method of claim 1 wherein said applying plasma source power comprises inductively coupling plasma power into said chamber.

8. The method of claim 1 wherein said workpiece comprises an oxygen-containing overlayer to be etched by said process and a non-oxygen-containing underlayer to be protected from etching, said precursor gas dissociating in said plasma into fluorine-containing etchant species which etch said oxygen-containing layer and carbon-containing polymer species which accumulate on said non-oxygen-containing underlayer.

9. The method of claim 8 further comprising providing a source of fluorine scavenging species in said chamber.

10. The method of claim 9 wherein said source of said fluorine scavenging species comprises a solid article in said chamber.

11. The method of claim 9 wherein said source of said fluorine scavenging species comprises a gas introduced into said chamber.

12. The method of claim 8 further comprising supplying an etch stop inhibitor gas into said reactor chamber.

13. The method of claim 8 wherein said non-reactive gas comprises one of:

(a) argon, (b) helium, (c) neon, (d) xenon.

14. The method of claim 8 further comprising applying RF bias power to said workpiece to control plasma ion energy.

15. The method of claim 14 wherein said plasma ion energy is sufficient to suppress net polymer accumulation on non-oxygen containing surfaces of said workpiece.

16. The method of claim 9 wherein said source of fluorine scavenger species comprises a solid silicon-containing material.

17. The method of claim 9 wherein said source of fluorine scavenger species comprises a solid carbon-containing material.

18. The method of claim 9 wherein said providing a source of fluorine scavenging species comprises introducing a scavenger species-containing gas into said chamber.

19. The method of claim 1 wherein said second flow rate is at least about 0.5 of the total flow rates of all gases supplied into said reactor chamber.

20. The method of claim 1 wherein said second flow rate is at least about 0.3 of the total flow rate of all gases supplied into said reactor chamber.

21. The method of claim 1 wherein said etchant and polymer precursor gas comprises a low-carbon content etchant and polymer precursor gas and a high-fluorine content etchant and polymer precursor gas in a ratio which provides a desired apportionment between polymer accumulation on said workpiece and polymer removal from said workpiece.

22. The method of claim 1 wherein the said gas pressure in said high pressure range is not decreased during said etch process.

23. A method of performing an etch process on a workpiece in a plasma reactor chamber, comprising:

supplying a polymer and etchant precursor gas containing at least carbon and fluorine into said chamber at a first flow rate sufficient of itself to maintain a gas pressure in said chamber in a low pressure range below about 20 mT;

establishing a high pressure range above 20 mT within said chamber for performing said etch process to define an etch structure by increasing said gas pressure in said chamber from said low pressure range to said high pressure range by adding a relatively non-reactive gas into said chamber at a second flow rate sufficient, in combination with the first flow rate of said precursor gas, to maintain said gas pressure in said high pressure range without requiring a decrease in the vacuum pump rate so as to increase polymer passivation strength without otherwise significantly increasing polymer precursor residence time;

continuously maintaining said gas pressure in said high pressure range during said etch process by continuously adding said relatively non-reactive gas into said chamber at said second flow rate; and

applying plasma source power into said chamber to form a high ion density plasma having an ion density in excess of 10¹⁰ ions per cubic centimeter.

24. The method of claim 23 wherein said gas pressure in said high pressure range is not decreased during said etch process.