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Apparatus for forming silicon oxide film and method of forming silicon oxide film

  • US 6,239,044 B1
  • Filed: 05/28/1999
  • Issued: 05/29/2001
  • Est. Priority Date: 06/08/1998
  • Status: Expired due to Fees
First Claim
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1. A method of forming a silicon oxide film, which comprises the step of:

  • thermally oxidizing a surface of a silicon layer of a substrate in a process chamber of an apparatus by introducing water into the process chamber;

    preventing dew formation in the process chamber, and evaporating any dew previously existing in the process chamber using a dew prevention/evaporation means;

    replacing an atmosphere in the process chamber with inert gas in a state where no water vapor is formed in the process chamber; and

    transferring the substrate out of the process chamber.

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