Active matrix electro-luminescent display thin film transistor

• US 6,239,470 B1
• Filed: 10/07/1999
• Issued: 05/29/2001
• Est. Priority Date: 11/17/1995
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Ngo , Ngan V.
• Application Number:
  US09/415,019
• Time in Patent Office: 600 Days
• Field of Search: 257/59, 257/72, 257/350, 257/639, 257/642, 257/643
• US Class Current: 257/350
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/78633 with a light shield

Abstract

A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.

Claims

1. An active matrix EL display comprising:

a thin film transistor provided over a substrate and comprising a source region, a drain region, a channel region provided between said source region and said drain region, a gate insulating film provided over said channel region, and a gate electrode provided over said gate insulating film;

an insulating layer comprising silicon nitride provided over said thin film transistor;

a transparent organic resin layer provided over said insulating layer to provide a leveled upper surface over said thin film transistor; and

a pixel electrode provided over said transparent organic resin layer and connected with one of said source region and said drain region.

7. The display of claim 1 wherein said transparent organic resin layer comprises polyimide resin.

13. The display of claim 1 wherein said active matrix EL display is an active matrix electro-luminescent display.

19. The display of claim 1 wherein said transparent organic resin layer comprises acrylic resin.

2. An active matrix EL display comprising:

a thin film transistor provided over a substrate and comprising a source region, a drain region, a channel region provided between said source region and said drain region, a gate insulating film provided over said channel region, and a gate electrode provided over said gate insulating film;

a first insulating layer comprising silicon oxide provided over said thin film transistor;

a second insulating layer comprising silicon nitride provided over said first insulating layer;

an organic resin layer provided over said second insulating layer to provide a leveled upper surface over said thin film transistor;

a pixel electrode provided over said organic resin layer and connected with one of said source region and said drain region.

8. The display of claim 2 wherein said organic resin layer comprises polyimide resin.

14. The display of claim 2 wherein said active matrix EL display is an active matrix electro-luminescent display.

20. The display of claim 2 wherein said organic resin layer comprises acrylic resin.

3. An active matrix EL display comprising:

a thin film transistor provided over a substrate and comprising a source region, a drain region, a channel region provided between said source region and said drain region, a gate insulating film provided over said channel region, and a gate electrode provided over said gate insulating film;

an insulating layer comprising silicon oxynitride provided over said thin film transistor;

an organic resin layer provided over said insulating layer to provide a leveled upper surface over said thin film transistor; and

a pixel electrode provided over said organic resin layer and connected with one of said source region and said drain region.

9. The display of claim 3 wherein said organic resin comprises polyimide resin.

15. The display of claim 3 wherein said active matrix EL display is an active matrix electro-luminescent display.

21. The display of claim 3 wherein said organic resin comprises acrylic resin.

4. An active matrix EL display comprising:

a thin film transistor provided over a substrate and comprising a gate electrode, a gate insulating film provided over said gate electrode, a source region, a drain region, a channel region provided between said source region and said drain region and over said gate insulating film;

an insulating layer comprising silicon nitride provided over said thin film transistor;

a transparent organic resin layer provided over said insulating layer to provide a leveled upper surface over said thin film transistor; and

a pixel electrode provided over said transparent organic resin layer and connected with one of said source region and said drain region.

10. The display of claim 4 wherein said transparent organic resin layer comprises polyimide resin.

16. The display of claim 4 wherein said active matrix EL display is an active matrix electro-luminescent display.

22. The display of claim 4 wherein said transparent organic resin layer comprises acrylic resin.

5. An active matrix EL display comprising:

a thin film transistor provided over a substrate and comprising a gate electrode, a gate insulating film provided over said gate electrode, a source region, a drain region, a channel region provided between said source region and said drain region and over said gate insulating film;

an insulating layer comprising silicon oxynitride provided over said thin film transistor;

an organic resin layer provided over said insulating layer to provide a leveled upper surface over said thin film transistor;

a pixel electrode provided over said organic resin layer and connected with one of said source region and said drain region.

11. The display of claim 5 wherein said organic resin layer comprises polyimide resin.

17. The display of claim 5 wherein said active matrix EL display is an active matrix electro-luminescent display.

23. The display of claim 5 wherein said organic resin layer comprises acrylic resin.

6. An active matrix EL display comprising:

a thin film transistor provided over a substrate and comprising a gate electrode, a gate insulating film provided over said gate electrode, a source region, a drain region, a channel region provided between said source region and said drain region and over said gate insulating film;

a first insulating layer comprising silicon oxide provided over said thin film transistor;

a second insulating layer comprising silicon nitride provided over said first insulating layer;

an organic resin layer provided over said second insulating layer to provide a leveled upper surface over said thin film transistor; and

a pixel electrode provided over said organic resin layer and connected with one of said source region and said drain region.

12. The display of claim 6 wherein said organic resin comprises polyimide resin.

18. The display of claim 6 wherein said active matrix EL display is an active matrix electro-luminescent display.

24. The display of claim 6 wherein said organic resin comprises acrylic resin.