Semiconductor chip package that is also an antenna

• US 6,239,752 B1
• Filed: 11/06/1996
• Issued: 05/29/2001
• Est. Priority Date: 02/28/1995
• Status: Expired due to Term

• Current Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: Blanchard, Richard A.
• Primary Examiner(s): Wimer, Michael C.
• Application Number:
  US08/749,381
• Time in Patent Office: 1,665 Days
• Field of Search: 343/720, 343/700 MS, 343/701, 343/702, 343/754, 343/767, 343/898, 257/793, 455/291, 455/293, 455/129
• US Class Current: 343/702
• CPC Class Codes: H01Q 1/002 Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna
• CPC Class Codes: H01Q 1/243 with built-in antennas
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142

Abstract

An integrated antenna structure wherein a metallic RF antenna provides part of the package structure for an RF transmit/receive chip. The requirement for a separate package to house the driver chip as well as for the wire or cable between the driver chip and the antenna are eliminated. The antenna itself provides a convenient heat sink. This arrangement is particularly attractive at UHF frequencies.

Claims

1. An integrated active antenna structure, comprising:

an antenna which operates at an RF operating frequency, said antenna having walls defining a cavity, an opening leading to said cavity, and an interior mounting surface within said cavity;

a semiconductor integrated circuit chip which is physically mounted on the interior mounting surface of said antenna, and which is connected to apply an RF drive signal to said antenna, the dimensions of said chip being small enough to permit installation thereof within said cavity by passing said chip through said opening;

material encapsulating said chip within said cavity; and

leads insulated from said antenna and electrically connected to said chip within said cavity, said leads extending outside said cavity through said opening to provide external electrical connection to said chip.

2. The integrated antenna structure of claim 1, wherein said chip is formed in a monolithic silicon substrate.

3. The integrated antenna structure of claim 1, wherein said antenna has a Q of less than three at the RF operating frequency.

4. The integrated antenna structure of claim 1, wherein said antenna is a rigid body of metal.

5. The integrated antenna structure of claim 1, wherein the RF operating frequency is in the range between 300 MHz and 3000 MHz.

6. The integrated antenna structure of claim 1, wherein said antenna is metal and said chip is soldered thereto to provide direct electrical connection between said chip and said antenna.

7. The integrated antenna structure of claim 1, wherein the RF operating frequency is in the range between 30 MHz and 3000 MHz.

8. An integrated active antenna structure, comprising:

a metallic antenna which operates at an RF operating frequency, said antenna having walls defining a cavity, an opening leading to said cavity, and an interior mounting surface within said cavity;

a semiconductor integrated circuit chip which has a back surface physically mounted on and electrically connected to the interior mounting surface of said antenna, said chip being connected to apply an RF drive signal to said antenna through said back surface connection;

material encapsulating said chip within said cavity; and

leads insulated from said antenna and electrically connected to said chip within said cavity, said leads extending outside said cavity through said opening to provide external electrical connection to said chip.

9. The integrated antenna structure of claim 8, wherein said chip is formed in a monolithic silicon substrate.

10. The integrated antenna structure of claim 8, wherein said antenna has a Q of less than three at the RF operating frequency.

11. The integrated antenna structure of claim 8, wherein said antenna is a rigid body of metal.

12. The integrated antenna structure of claim 8, wherein the RF operating frequency is in the range between 300 MHz and 3000 MHz.

13. The integrated antenna structure of claim 8, wherein the RF operating frequency is in the range between 30 MHz and 3000 MHz.

14. An integrated active antenna structure, comprising:

an elongated antenna which operates at an RF operating frequency, said antenna having walls defining a cavity, an opening leading to said cavity, and an interior mounting surface within said cavity, said opening being disposed at a longitudinal end of said antenna;

a semiconductor integrated circuit chip which is physically mounted on the interior mounting surface of said antenna inside said cavity, and which is connected to apply an RF drive signal to said antenna;

a body of epoxy material disposed in said opening and filling said cavity to entirely encapsulate said chip within said cavity; and

leads insulated from said antenna and electrically connected to said chip within said cavity, said leads extending through said opening outside said body of epoxy material to provide external electrical connection to said chip.

15. The integrated antenna structure of claim 14, wherein said chip is formed in a monolithic silicon substrate.

16. The integrated antenna structure of claim 14, wherein said antenna has a Q of less than three at the RF operating frequency.

17. The integrated antenna structure of claim 14, wherein said antenna is a rigid body of metal.

18. The integrated antenna structure of claim 14, wherein the RF operating frequency is in the range between 300 MHz and 3000 MHz.

19. The integrated antenna structure of claim 14, wherein said antenna is metal and said chip is soldered thereto to provide direct electrical connection between said chip and said antenna.

20. The integrated antenna structure of claim 14, wherein the RF operating frequency is in the range between 30 MHz and 3000 MHz.