Method and apparatus for detecting a polishing endpoint based upon infrared signals

• US 6,241,847 B1
• Filed: 06/30/1998
• Issued: 06/05/2001
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Allman, Derryl D. J., Daniel, David W., Gregory, John W.
• Primary Examiner(s): Stinson, Frankie L.
• Application Number:
  US09/107,342
• Time in Patent Office: 1,071 Days
• Field of Search: 451/6, 451/7, 451/8, 451/5, 451/288, 156/636.1, 156/626.1, 438/691, 438/492
• US Class Current: 438/8
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]

Abstract

A method of polishing a first layer of a semiconductor wafer down to a second layer of the semiconductor wafer is disclosed. One step of the method includes polishing the first layer of the semiconductor wafer with a polishing surface having a chemical slurry positioned thereon. The polishing step causes an infrared spectrum to be emitted through the semiconductor wafer. Another step of the method includes detecting a rate of change of intensity level of the infrared spectrum and generating a control signal in response thereto. The method also includes halting the polishing step in response to generation of the control signal. Polishing systems are also disclosed which determine a polishing endpoint for a semiconductor wafer based upon an infrared spectrum generated due to a chemical slurry reacting with the semiconductor wafer.

Claims

1. A method of polishing a first layer of a semiconductor wafer down to a second layer of said semiconductor wafer, comprising the steps of:

polishing said first layer of said semiconductor wafer with a polishing surface having a chemical slurry positioned thereon, said polishing step causing an infrared spectrum to be emitted through said semiconductor wafer;

detecting a rate of change of intensity level of said infrared spectrum and generating a control signal in response thereto; and

halting said polishing step in response to generation of said control signal.

2. The method of claim 1, wherein said halting step includes the steps of:

waiting a predetermined period after said detecting step generates said control signal, and

halting said polishing step after said predetermined period has lapsed.

3. The method of claim 1, wherein said detecting step includes the step of:

generating said control signal in response to said intensity level changing by less than a predetermined amount over a predetermined period.

4. The method of claim 1, wherein said polishing step includes the steps of (i) polishing said semiconductor wafer for a predetermined minimum polishing period, and (ii) initiating said detecting step in response to said predetermined minimum polishing period lapsing.

5. A method of polishing a first layer of a semiconductor wafer down to a second layer of said semiconductor wafer, comprising the steps of:

polishing said first layer of said semiconductor wafer with a polishing surface having a chemical slurry positioned thereon, said polishing step causing an infrared spectrum to be emitted through said semiconductor wafer;

determining a rate of change of an intensity level of said infrared spectrum during said polishing step; and

halting said polishing step when said rate of change of said intensity level of said infrared spectrum equals a predetermined rate of change value.

6. The method of claim 5, wherein:

said predetermined rate of change value is substantially equal to zero.

7. A method of polishing a first layer of a semiconductor wafer down to a second layer of said semiconductor wafer, comprising the steps of:

applying a chemical slurry to a polishing surface;

polishing said first layer of said semiconductor wafer with said polishing surface so as to advance said chemical slurry into contact with said first layer;

polishing said second layer of said semiconductor wafer with said polishing surface so as to advance said chemical slurry into contact with said second layer, wherein initiation of said second layer polishing step occurs after initiation of said first layer polishing step;

determining when said second layer polishing step is initiated based on said chemical slurry contacting said second layer, and generating a control signal in response thereto;

halting said second layer polishing step in response to generation of said control signal,

wherein said chemical slurry reacts with said first layer of said semiconductor wafer so as to generate a first infrared spectrum when said first layer of said semiconductor contacts said chemical slurry,

said chemical slurry reacts with said second layer of said semiconductor wafer so as to generate a second infrared spectrum when said second layer of said semiconductor contacts said chemical slurry, and

said determining step includes the step of detecting generation of said second infrared spectrum by said chemical slurry reacting with said second layer of said semiconductor wafer and generating said control signal in response thereto.

8. The method of claim 7, wherein said detecting step includes the steps of:

determining when said chemical slurry transitions from generating said first infrared spectrum to generating said second infrared spectrum, and

generating said control signal in response to determining that said chemical slurry transitioned from generating said first infrared spectrum to generating said second infrared spectrum.