Method for fabricating micro inertia sensor

• US 6,242,276 B1
• Filed: 01/14/2000
• Issued: 06/05/2001
• Est. Priority Date: 01/15/1999
• Status: Expired due to Term

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Ha, Byeoung-ju, Oh, Young-soo, Baek, Seog-soon
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nhu, David
• Application Number:
  US09/482,528
• Time in Patent Office: 508 Days
• Field of Search: 438/51, 438/106, 438/507, 438/406, 438/510, 438/524, 438/959, 438/50, 438/52, 438/702, 438/924
• US Class Current: 438/51
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
• CPC Class Codes: B81C 2201/0104 Chemical-mechanical polishing [CMP]
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Abstract

A micro inertia sensor fabrication method in which thick silicon bonded to glass is processed at a high sectional ratio, is provided. In this method, silicon is bonded to a glass substrate, the bonded silicon is polished to have a desired thickness, a silicon structure is formed by etching the polished silicon using an RIE method, and the silicon structure is separated from the bottom by selectively etching glass below the silicon structure via grooves in etched silicon. Since the thick silicon bonded to glass is processed at a high sectional ratio, the area and thickness of the silicon to be measured are increased. Also, this method is simple since only one mask is used.

Claims

1. A method of fabricating a micro inertia sensor, comprising:

(a) bonding bulk silicon to a glass substrate;

(b) forming an inertia sensor structure by anisotropically etching the bulk silicon;

(c) forming a vacuum space by etching glass below the silicon inertia sensor structure;

(d) depositing a metal for use as an electrode on a top surface and the surface of the silicon inertia sensor structure which has been etched.

2. The method of claim 1, wherein in the step (a), the glass substrate is formed of Pyrex®

glass, and the bulk silicon is n⁺ or p⁺-doped bulk silicon.

3. The method of claim 1, wherein in the step (a), the glass substrate is bonded to the bulk silicon by anodic bonding.

4. The method of claim 1, wherein the anisotropic etching method in the step (c) is a reactive ion etching (RIE) method.

5. The method of claim 4, wherein in the step b, the RIE method is performed after a photoresist pattern is formed on the polished bulk silicon.

6. The method of claim 4, wherein in the step b, the RIE method is performed at an etching selectivity of the glass substrate to the bulk silicon in the range of 1:

100 to 1;

300.

7. The method of claim 1, before the step e, further comprising dicing the glass substrate having the inertia sensor structure formed thereon, into individual chips.

8. The method of claim 7, wherein in the step c, the cut individual chips are dipped into a hydrofluoric (HF) solution, and thus the HF solution flows into grooves and etches glass below the inertia sensor structure.

9. The method of claim 1, wherein the step d is performed by sputtering.

10. The method of claim 7, after the step d, further comprising packaging and wire bonding the individual chips.

11. The method of claim 2, wherein in the step (a), the glass substrate is bonded to the bulk silicon by anodic bonding.

12. The method of claim 5, wherein the step b, the RIE method is performed at an etching selectivity of the glass substrate to the bulk silicon in the range of 1:

100 to 1;

300.

13. The method of claim 1, comprising the step of polishing the bonded bulk silicon to have a desired thickness prior to etching the bulk silicon.

14. The method of claim 13, the bonded silicon surface is polished by mechanical or chemical polishing.