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Method for forming self-aligned contact

  • US 6,242,332 B1
  • Filed: 08/27/1999
  • Issued: 06/05/2001
  • Est. Priority Date: 08/29/1998
  • Status: Expired due to Fees
First Claim
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1. A method for forming a self-aligned contact of a semiconductor device, comprising:

  • forming a conductive layer over a semiconductor substrate;

    forming a first multiple insulating layer over the conductive layer, the first multiple insulating layer including a first insulating layer and a second insulating layer that has an etching selectivity with respect to the first insulating layer;

    forming a second multiple insulating layer over the first multiple insulating layer, the second multiple insulating layer including a third insulating layer and a fourth insulating layer, the third insulating layer having an etching selectivity with respect to both the second and fourth insulating layers;

    forming a plurality of gate electrodes by etching the conductive layer, the first multiple insulating layer, and the second multiple insulating layer using a gate electrode formation mask;

    forming a spacer on gate sidewalls of the gate electrode, the spacer having an etch selectivity with respect to the fourth insulating layer;

    forming an interlayer insulating layer over the semiconductor substrate to fill spaces between the gate electrodes, the interlayer insulating layer having a etching selectivity with respect to the third insulating layer;

    etching the interlayer insulating layer until a top surface of the semiconductor substrate between the gate electrodes is exposed, to form an opening;

    forming a conductive layer over the interlayer insulating layer and in the opening; and

    planarizing the conductive layer to form a pad.

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