×

Photovoltaic device and process for producing the same

  • US 6,242,686 B1
  • Filed: 06/11/1999
  • Issued: 06/05/2001
  • Est. Priority Date: 06/12/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A photovoltaic device comprising a pin junction of a player, an i-layer and an n-layer,wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity;

  • wherein each of the first p-layer and the second p-layer comprises one of (a) hydrogenated amorphous silicon (a-Si;

    H), (b) hydrogenated amorphous germanium (a-Ge;

    H), and (c) hydrogenated amorphous silicon germanium (a-SiGe;

    H); and

    wherein the first p-layer is formed directly on a transparent electrode.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×