Two-dimensional image detector

• US 6,242,729 B1
• Filed: 03/23/1999
• Issued: 06/05/2001
• Est. Priority Date: 03/23/1998
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Izumi, Yoshihiro, Teranuma, Osamu
• Primary Examiner(s): Epps, Georgia
• Assistant Examiner(s): Seyrafi, Saeed
• Application Number:
  US09/274,316
• Time in Patent Office: 805 Days
• Field of Search: 250/208.1, 250/370.08, 250/370.09, 257/72
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00

Abstract

A two-dimensional image detector is provided with an active-matrix substrate, which has lattice-shaped wiring, a plurality of thin-film transistors installed at the respective lattice points of the electrode wiring and a plurality of pixel electrodes, an opposing substrate, which has a semiconductor layer having a photoconductive property, and conductive members for connecting the pixel electrodes and the semiconductor electrode. In the gap between the active-matrix substrate and the opposing substrate, areas having no conductive members are filled with an inactive gas.

Claims

1. A two-dimensional image detector comprising:

an active-matrix substrate having a switching element and a charge-storage capacity including a pixel electrode connected to the switching element;

an opposing substrate that is provided with an electrode layer and a semiconductor layer having a photoconductivity and that is aligned face to face with the active-matrix substrate with a gap in between;

a conductive connecting member for connecting the pixel electrode and the semiconductor layer, that is placed in the gap between the active-matrix substrate and the opposing substrate; and

a seal member for sealing a peripheral portion of a joining area between the active-matrix substrate and the opposing substrate.

2. The two-dimensional image detector as in claim 1, further comprising:

an insulating material that is placed in the gap between the active-matrix substrate and the opposing substrate, at areas having no conductive connecting member.

3. The two-dimensional image detector as defined in claim 2, wherein said insulating material is an inactive gas.

4. The two-dimensional image detector as defined in claim 2, wherein said insulating material is an inactive liquid.

5. The two-dimensional image detector as defined in claim 3, wherein said inactive liquid is silicone oil.

6. The two-dimensional image detector as defined in claim 2, wherein said insulating material is a photopolymerizable high polymer.

7. A two-dimensional image detector as in claim 1,

wherein an area having no conductive connecting member in the gap between the active-matrix substrate and the opposing substrate is depressurized to a reduced pressure lower than the atmospheric pressure.

8. The two-dimensional image detector as defined in claim 1, wherein said semiconductor layer is a compound semiconductor made of CdTe or CdZnTe.

9. The two-dimensional image detector as defined in claim 1, wherein said opposing substrate is provided with a charge-blocking layer for blocking a charge injection from one side, which is installed on the semiconductor layer.

10. The two-dimensional image detector as defined in claim 1, wherein said seal member has an opening section.

11. The two-dimensional image detector as defined in claim 1, wherein an insulating layer is installed between the electrode layer and the semiconductor layer.

12. The two-dimensional image detector as defined in claim 1, wherein said connecting material is a photosensitive resin having an adhesive property.

13. A two-dimensional detector as in claim 1 wherein the pixel electrode is connected to the switching element on the drain side.

20. The two-dimensional image detector as defined in claim 9, wherein said opposing substrate is provided with a connecting electrode placed at a position facing the pixel electrode of the active-matrix substrate, on the charge-blocking layer.

14. A two-dimensional image detector comprising:

an active-matrix substrate having a switching element and a charge-storage capacity including a pixel electrode connected to the switching element;

an opposing substrate that is provided with an electrode layer and a semiconductor layer having a photoconductivity and that is aligned face to face with the active-matrix substrate with a gap in between;

a conductive connecting member for connecting the pixel electrode and the semiconductor layer, that is placed in the gap between the active-matrix substrate and the opposing substrate;

a seal member in a peripheral region between the active-matrix substrate and the opposing substrate, and said seal member sealing a gap between the active-matrix substrate and the opposing substrate, and

an insulating material that is placed in the gap between the active-matrix substrate and the opposing substrate, said insulating material being within a perimeter of the seal member, and said insulating material being at areas having no conductive connecting member, and the insulating material fills an area having no conductive conducting member in the gap between the active-matrix substrate and the opposing substrate.

15. The two-dimensional image detector as in claim 14, wherein said insulating material is an inactive gas.

16. The two-dimensional image detector as in claim 14, wherein said insulating material is an inactive liquid.

17. The two-dimensional image detector as in claim 14, wherein said inactive liquid is silicone oil.

18. The two-dimensional image detector as in claim 14, wherein said insulating material is a photopolymerizable high polymer.

19. The two-dimensional detector as in claim 14 wherein the pixel electrode is connected to the switching element on the drain side.