Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
First Claim
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1. A semiconductor device comprising:
- a resinous substrate;
a resinous layer on said resinous substrate for planarizing a surface of the substrate;
a gate electrode on said resinous layer;
a gate insulating layer on said gate electrode;
a semiconductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
an etch stopper on said semiconductor layer;
a source and a drain on said semiconductor layer with said etch stopper interposed therebetween;
an interlayer insulating film comprising a resinous material over said etch stopper and said source and said drain, said interlayer insulating film having a leveled surface;
a pixel electrode on said leveled surface of said interlayer insulating film.
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Abstract
A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.
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Citations
68 Claims
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1. A semiconductor device comprising:
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a resinous substrate;
a resinous layer on said resinous substrate for planarizing a surface of the substrate;
a gate electrode on said resinous layer;
a gate insulating layer on said gate electrode;
a semiconductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
an etch stopper on said semiconductor layer;
a source and a drain on said semiconductor layer with said etch stopper interposed therebetween;
an interlayer insulating film comprising a resinous material over said etch stopper and said source and said drain, said interlayer insulating film having a leveled surface;
a pixel electrode on said leveled surface of said interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a resinous substrate;
a resinous layer on said substrate;
a gate electrode over said resinous layer;
a gate insulating layer on said gate electrode;
an amorphous semiconductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
an etch stopper on said semiconductor layer;
a source electrode and a drain electrode on said semiconductor layer with said etch stopper interposed therebetween;
an interlayer insulating film comprising a resinous material over said etch stopper and said source and said drain, said interlayer insulating film having a leveled surface;
a pixel electrode on said leveled surface of said interlayer insulating film; and
an orientation film on said pixel electrode. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a resinous substrate;
a resinous layer on said substrate;
a gate electrode over said resinous layer;
a gate insulating layer on said gate electrode;
a semi conductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
an etch stopper said semiconductor layer;
a source and a drain on said semiconductor layer with said each stopper interposed therebetween;
an interlayer insulating film comprising a resinous material over said etch stopper and said source and said drain, said interlayer insulating film having a leveled surface; and
a pixel electrode on said leveled surface of said interlayer insulating film, wherein said semiconductor layer is a crystalline semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a substrate comprising a resinous material;
a resinous layer on said substrate;
a thin film transistor formed over said resinous layer, said thin film transistor having at least, source, drain and channel regions, a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween;
an interlayer insulating film comprising resinous material formed over said substrate and covering said thin film transistor, said interlayer insulating film having a leveled surface; and
a pixel electrode on said leveled surface of said interlayer insulating film, wherein said semiconductor device is flexible. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A semiconductor device comprising:
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a substrate comprising a resinous material;
a resinous layer on said substrate for planarizing a surface of the substrate;
a thin film transistor formed over said resinous layer, said thin film transistor having at least, source, drain and channel regions, a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; and
an interlayer insulating film comprising a resinous material formed over said substrate and covering said thin film transistor, said interlayer insulating film having a leveled surface; and
a pixel electrode on said leveled surface of said interlayer insulating film. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36)
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37. A semiconductor device comprising:
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a substrate comprising a resinous material;
a resinous layer on said resinous substrate;
a thin film transistor formed over said resinous layer, said thin film transistor having at least, source, drain and channel regions, a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; and
an interlayer insulating film comprising a resinous material formed over said substrate and covering said thin film transistor, wherein said resinous layer comprises a material selected from the group consisting of methyl esters of acrylic acid, ethyl esters of acrylic acid, butyl esters of acrylic acid, and 2-ethylhexyl esters of acrylic acid. - View Dependent Claims (38, 39, 40, 41, 42, 43)
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44. A semiconductor device comprising:
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a resinous substrate;
a resinous layer on said resinous substrate;
a gate electrode over said resinous layer;
a gate insulating layer on said gate electrode;
a semiconductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
a source electrode and a drain electrode on said semiconductor layer; and
a resinous material over said source and drain electrodes, wherein material of said resinous layer is different from that of said resinous substrate. - View Dependent Claims (45, 46, 47, 48, 49)
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50. A semiconductor device comprising:
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a resinous substrate;
a resinous layer on said resinous substrate;
a gate electrode over said resinous layer;
a gate insulating layer on said gate electrode;
an amorphous semiconductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
a source electrode and a drain electrode on said semiconductor layer; and
a resinous material over said source and drain electrodes, wherein material of said resinous layer is different from that of said resinous substrate. - View Dependent Claims (51, 52, 53, 54, 55)
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56. A semiconductor device comprising:
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a resinous substrate;
a resinous layer on said resinous substrate;
a gate electrode on said resinous layer;
a gate insulating layer on said gate electrode;
a semiconductor layer on said gate insulating layer, said semiconductor layer having at least a channel region;
a source electrode and a drain electrode on said semiconductor layer; and
a resinous material over said source and drain electrodes, wherein said semiconductor layer is a crystalline semiconductor film, and wherein material of said resinous layer is different from that of said resinous substrate. - View Dependent Claims (57, 58, 59, 60, 61)
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62. A semiconductor device comprising:
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a substrate comprising a resinous material;
a resinous layer on said resinous substrate;
a thin film transistor on said resinous layer, said thin film transistor having at least, source, drain and channel regions, a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; and
an interlayer insulating film comprising resinous material formed over said substrate and covering said thin film transistor, wherein material of said resinous layer is different from that of said resinous substrate, and wherein said semiconductor device is flexible. - View Dependent Claims (63, 64, 65, 66, 67, 68)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTeramoto, Satoshi, Arai, Yasuyuki, Yamazaki, Shunpei
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Primary Examiner(s)Lee, Eddie C.
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Assistant Examiner(s)Eckert, II, George C.
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Application NumberUS08/955,617Time in Patent Office1,322 DaysField of Search257/59, 257/57, 257/72US Class Current257/59CPC Class CodesG02F 1/133305 Flexible substrates, e.g. p...G02F 1/136227 Through-hole connection of ...H01L 29/78636 with supplementary region o...
