Semiconductor device and method for forming the same

• US 6,242,759 B1
• Filed: 01/23/1998
• Issued: 06/05/2001
• Est. Priority Date: 03/27/1991
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko, Yamazaki, Shunpei
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Nadav, Ori
• Application Number:
  US09/012,736
• Time in Patent Office: 1,229 Days
• Field of Search: 257/67, 257/69, 257/74, 257/351, 257/369, 438/152, 438/153, 438/154
• US Class Current: 257/69
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: Y10S 438/967 Semiconductor on specified insulator

Abstract

A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

Claims

1. A semiconductor device comprising:

a substrate having an insulating surface;

an insulating and thermally contracted film formed over said substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a semiconductor film comprising silicon formed over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

2. A semiconductor device according to claim 1, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

3. A semiconductor device according to claim 1, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, polycrystalline semiconductor film and a semi-amorphous semiconductor film.

4. A semiconductor device according to claim 1, wherein said semiconductor film further comprises germanium.

5. A semiconductor device comprising:

a substrate having an insulating surface;

an insulating and thermally contracted film comprising silicon oxide formed over said substrate, said insulating and thermally contracted film having a thickness of 50-10000 nm;

a semiconductor film formed over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

6. A semiconductor device according to claim 5, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

7. A semiconductor device according to claim 5, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, polycrystalline semiconductor film and a semi-amorphous semiconductor film.

8. A semiconductor device according to claim 5, wherein said semiconductor film further comprises germanium.

9. A semiconductor device comprising:

a substrate having an insulating surface;

an insulating and thermally contracted film containing hydrogen at a concentration of 10-30 atomic % formed over said substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a semiconductor film comprising silicon formed over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

10. A semiconductor device according to claim 9, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

11. A semiconductor device according to claim 9, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, polycrystalline semiconductor film and a semi-amorphous semiconductor film.

12. A semiconductor device according to claim 9, wherein said semiconductor film further comprises germanium.

13. A semiconductor device comprising:

a substrate having an insulating surface;

an insulating and thermally contracted film formed over said substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

14. A semiconductor device according to claim 13, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

15. A semiconductor device according to claim 13, wherein said crystalline semiconductor film further comprises germanium.

16. A semiconductor device comprising:

a substrate having an insulating surface;

an insulating and thermally contracted film comprising silicon oxide formed over said substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

17. A semiconductor device according to claim 16, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

18. A semiconductor device according to claim 16, wherein said crystalline semiconductor film further comprises germanium.

19. A semiconductor device comprising:

a substrate having an insulating surface;

an insulating and thermally contracted film containing hydrogen at a concentration of 10-30 atomic % formed over said substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

20. A semiconductor device according to claim 19, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

21. A semiconductor device according to claim 19, wherein said crystalline semiconductor film further comprises germanium.

22. A semiconductor device comprising:

a semiconductor substrate;

an insulating and thermally contracted film formed over said semiconductor substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a semiconductor film comprising silicon formed over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

23. A semiconductor device according to claim 22, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

24. A semiconductor device according to claim 22, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, polycrystalline semiconductor film and a semi-amorphous semiconductor film.

25. A semiconductor device according to claim 22, wherein said semiconductor film further comprises germanium.

26. A semiconductor device according to claim 22, wherein a CMOS circuit is formed by an insulated gate field effect transistor and a thin film transistor, said thin film transistor formed over said insulated gate field effect transistor and electrically connected thereto.

27. A semiconductor device according to claim 26, wherein said insulated gate field effect transistor has said semiconductor substrate and wherein said thin film transistor has said semiconductor film.

28. A semiconductor device comprising:

a semiconductor substrate;

an insulating and thermally contracted film comprising silicon oxide formed over said semiconductor substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a semiconductor film formed over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

29. A semiconductor device according to claim 28, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

30. A semiconductor device according to claim 28, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, polycrystalline semiconductor film and a semi-amorphous semiconductor film.

31. A semiconductor device according to claim 28, wherein said semiconductor film further comprises germanium.

32. A semiconductor device according to claim 28, wherein a CMOS circuit is formed by an insulated gate field effect transistor and a thin film transistor, said thin film transistor formed over said insulated gate field effect transistor and electrically connected thereto.

33. A semiconductor device according to claim 32, wherein said insulated gate field effect transistor has said semiconductor substrate and wherein said thin film transistor has said semiconductor film.

34. A semiconductor device comprising:

a semiconductor substrate;

an insulating and thermally contracted film containing hydrogen at a concentration of 10-30 atomic % formed over said semiconductor substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a semiconductor film comprising silicon formed over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

35. A semiconductor device according to claim 34, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

36. A semiconductor device according to claim 34, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, polycrystalline semiconductor film and a semi-amorphous semiconductor film.

37. A semiconductor device according to claim 34, wherein said semiconductor film further comprises germanium.

38. A semiconductor device according to claim 34, wherein a CMOS circuit is formed by an insulated gate field effect transistor and a thin film transistor, said thin film transistor formed over said insulated gate field effect transistor and electrically connected thereto.

39. A semiconductor device according to claim 38, wherein said insulated gate field effect transistor has said semiconductor substrate and wherein said thin film transistor has said semiconductor film.

40. A semiconductor device comprising:

a semiconductor substrate;

an insulating and thermally contracted film formed over said semiconductor substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

41. A semiconductor device according to claim 40, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

42. A semiconductor device according to claim 40, wherein said crystalline semiconductor film further comprises germanium.

43. A semiconductor device according to claim 40, wherein a CMOS circuit is formed by an insulated gate field effect transistor and a thin film transistor, said thin film transistor formed over said insulated gate field effect transistor and electrically connected thereto.

44. A semiconductor device according to claim 43, wherein said insulated gate field effect transistor has said semiconductor substrate and wherein said thin film transistor has said crystalline semiconductor film.

45. A semiconductor device comprising:

a semiconductor substrate;

an insulating and thermally contracted film comprising silicon oxide formed over said semiconductor substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

46. A semiconductor device according to claim 45, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

47. A semiconductor device according to claim 45, wherein said crystalline semiconductor film further comprises germanium.

48. A semiconductor device according to claim 45, wherein a CMOS circuit is formed by an insulated gate field effect transistor and a thin film transistor, said thin film transistor formed over said insulated gate field effect transistor and electrically connected thereto.

49. A semiconductor device according to claim 48, wherein said insulated gate field effect transistor has said semiconductor substrate and wherein said thin film transistor has said crystalline semiconductor film.

50. A semiconductor device comprising:

a semiconductor substrate;

an insulating and thermally contracted film containing hydrogen at a concentration of 10-30 atomic % formed over said semiconductor substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm;

a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

51. A semiconductor device according to claim 50, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

52. A semiconductor device according to claim 50, wherein said crystalline semiconductor film further comprises germanium.

53. A semiconductor device according to claim 50, wherein a CMOS circuit is formed by an insulated gate field effect transistor and a thin film transistor, said thin film transistor formed over said insulated gate field effect transistor and electrically connected thereto.

54. A semiconductor device according to claim 53, wherein said insulated gate field effect transistor has said semiconductor substrate and wherein said thin film transistor has said crystalline semiconductor film.