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Nitride compound semiconductor light emitting device

  • US 6,242,761 B1
  • Filed: 02/20/1998
  • Issued: 06/05/2001
  • Est. Priority Date: 02/21/1997
  • Status: Expired due to Term
First Claim
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1. A nitride compound semiconductor light emitting device including an active layer, a current blocking layer and a contact layer, wherein said current blocking layer has an opening so that a current can be selectively injected into said active layer, said current blocking layer is interposed between said active layer and said contact layer and said current blocking layer is made of an oxide of a metal selected from the group consisting of titanium (Ti), magnesium (Mg), nickel (Ni), chromium (Cr), scandium (Sc), zinc (Zn), indium (In), tin (Sn) and tungsten (W).

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